High-Power, High-Repetition Short-Pulse Laser Driver Using Direct-Drive D-Mode GaN HEMT

IF 5 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC
Ching-Yao Liu;Chun-Hsiung Lin;Hao-Chung Kuo;Yu-Heng Hong;Edward-Yi Chang;Wei-Hua Chieng
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引用次数: 0

Abstract

This paper proposes a short-pulse laser driver using direct-drive depletion-mode gallium nitride high-electron-mobility-transistor (DDD GaN HEMT) device. Known for its low on-resistance, high switching performance, normally-off operation, and reliability, DDD GaN devices are becoming popular in power applications. In this work, an in-house D-mode GaN HEMT with a blocking voltage of 200 V and on-resistance of 18 mΩ is used in a short-pulse laser driver for the optical phased array (OPA) applications. To achieve higher spatial resolution, the laser repetition rate must be in the tens of MHz range. Therefore, the dynamic behavior of device is first characterized by the double-pulse test. Additionally, the push-pull based laser driver actively controls the load capacitor charging time and the laser pulse width, thereby ensuring stable operation at high repetition rates. The output characteristics of switch-controlled (SC) short-pulse laser driver are simplified to switch turn-on time, stray inductance, and the input voltage. Finally, the experimental results achieved a short pulse width of less than 5 ns, high repetition rate of 50 MHz, propagation delay of less than 1.5 ns and peak power of 175 W, meeting the requirements for the specified object detection application.
使用直接驱动d模GaN HEMT的高功率、高重复短脉冲激光驱动器
本文提出了一种采用直接驱动耗尽型氮化镓高电子迁移率晶体管(DDD GaN HEMT)器件的短脉冲激光驱动器。DDD GaN器件以其低导通电阻,高开关性能,正常关闭操作和可靠性而闻名,在电源应用中越来越受欢迎。在这项工作中,一个内部的d模式GaN HEMT,阻断电压为200 V,导通电阻为18 mΩ,用于光学相控阵(OPA)应用的短脉冲激光驱动器。为了获得更高的空间分辨率,激光重复频率必须在几十兆赫的范围内。因此,首先通过双脉冲试验来表征器件的动态特性。此外,基于推挽的激光驱动器主动控制负载电容器充电时间和激光脉冲宽度,从而确保在高重复率下稳定运行。将开关控制(SC)短脉冲激光驱动器的输出特性简化为开关导通时间、杂散电感和输入电压。最后,实验结果实现了短脉冲宽度小于5 ns,高重复频率为50 MHz,传播延迟小于1.5 ns,峰值功率为175 W,满足了指定目标检测应用的要求。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
CiteScore
8.60
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0.00%
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审稿时长
8 weeks
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