Evan Williams, Angus Gale*, Jake Horder, Dominic Scognamiglio, Milos Toth and Igor Aharonovich,
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引用次数: 0
Abstract
Hexagonal boron nitride (hBN) is an emerging material for use in quantum technologies, hosting bright and stable single photon emitters (SPEs). The B-center is one promising SPE in hBN, due to the near-deterministic creation methods and regular emission wavelength. However, incorporation of B-centers in high-quality crystals remains challenging, typically relying on additional postgrowth methods to increase creation efficiency. Here, we have demonstrated controlled carbon doping of hBN during growth, using a metal flux-based method to increase the efficiency of B-center creation. Importantly, single B-centers with g(2)(0) < 0.5 were able to be generated in the as-grown hBN when carbon additions during growth exceeded 2.5 wt % C. Resonant excitation measurements revealed line widths of 3.5 GHz with only moderate spectral diffusion present, demonstrating the applicability of the as-grown hBN as a host for high-quality B-centers.
期刊介绍：
The aim of Crystal Growth & Design is to stimulate crossfertilization of knowledge among scientists and engineers working in the fields of crystal growth, crystal engineering, and the industrial application of crystalline materials.
Crystal Growth & Design publishes theoretical and experimental studies of the physical, chemical, and biological phenomena and processes related to the design, growth, and application of crystalline materials. Synergistic approaches originating from different disciplines and technologies and integrating the fields of crystal growth, crystal engineering, intermolecular interactions, and industrial application are encouraged.
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