Design of A 26/36 GHz Dual-Band GaN MMIC Power Amplifier

IF 1 4区工程技术 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC

Microwave and Optical Technology Letters Pub Date : 2025-04-01 DOI:10.1002/mop.70187

Qi Cai, Dingyuan Zeng, Haoshen Zhu, Quan Xue, Wenquan Che

引用次数: 0

Abstract

This letter presents a design of a dual-band power amplifier (PA) monolithic microwave integrated circuit (MMIC). A modified dual-band component based bias integrated dual-band matching circuit is employed for both input and output network to achieve small size and low loss. For demonstration, one dual-band PA is designed using 0.15 μm GaN-on-SiC process at 28/39 GHz. The fabricated PA achieves peak output power of 31.4 and 29 dBm at the measured frequency of 26 and 36 GHz, respectively, while the measured maximum drain efficiency (DE) is 51.1% and 27.8% at the two frequencies. The proposed dual-band PA occupies an area of 1.4 mm × 1 mm including pads.

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26/36 GHz双频GaN MMIC功率放大器的设计

本文介绍了一种双频功率放大器单片微波集成电路的设计。输入输出网络均采用一种改进的基于双带分量的偏置集成双带匹配电路，实现了小尺寸、低损耗。为了验证，设计了一个双频PA，采用0.15 μm GaN-on-SiC工艺，工作频率为28/39 GHz。该放大器在26 GHz和36 GHz频率下的峰值输出功率分别为31.4和29 dBm，最大漏极效率（DE）分别为51.1%和27.8%。建议的双频扩音器面积为1.4 mm × 1mm（包括焊盘）。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Microwave and Optical Technology Letters 工程技术-工程：电子与电气

CiteScore

3.40

自引率

20.00%

发文量

371

审稿时长

4.3 months

期刊介绍： Microwave and Optical Technology Letters provides quick publication (3 to 6 month turnaround) of the most recent findings and achievements in high frequency technology, from RF to optical spectrum. The journal publishes original short papers and letters on theoretical, applied, and system results in the following areas. - RF, Microwave, and Millimeter Waves - Antennas and Propagation - Submillimeter-Wave and Infrared Technology - Optical Engineering All papers are subject to peer review before publication