Design of A 26/36 GHz Dual-Band GaN MMIC Power Amplifier

IF 1 4区工程技术 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC

Microwave and Optical Technology Letters Pub Date : 2025-04-01 DOI:10.1002/mop.70187

Qi Cai, Dingyuan Zeng, Haoshen Zhu, Quan Xue, Wenquan Che

引用次数: 0

Abstract

This letter presents a design of a dual-band power amplifier (PA) monolithic microwave integrated circuit (MMIC). A modified dual-band component based bias integrated dual-band matching circuit is employed for both input and output network to achieve small size and low loss. For demonstration, one dual-band PA is designed using 0.15 μm GaN-on-SiC process at 28/39 GHz. The fabricated PA achieves peak output power of 31.4 and 29 dBm at the measured frequency of 26 and 36 GHz, respectively, while the measured maximum drain efficiency (DE) is 51.1% and 27.8% at the two frequencies. The proposed dual-band PA occupies an area of 1.4 mm × 1 mm including pads.

查看原文本刊更多论文

求助全文

约1分钟内获得全文求助全文

来源期刊

Microwave and Optical Technology Letters 工程技术-工程：电子与电气

CiteScore

3.40

自引率

20.00%

发文量

371

审稿时长

4.3 months

期刊介绍： Microwave and Optical Technology Letters provides quick publication (3 to 6 month turnaround) of the most recent findings and achievements in high frequency technology, from RF to optical spectrum. The journal publishes original short papers and letters on theoretical, applied, and system results in the following areas. - RF, Microwave, and Millimeter Waves - Antennas and Propagation - Submillimeter-Wave and Infrared Technology - Optical Engineering All papers are subject to peer review before publication