Vacuum-assisted exfoliation method for large-area, high-quality graphene flakes in nanodevice applications

IF 5.5 3区 材料科学 Q2 CHEMISTRY, MULTIDISCIPLINARY
Minwook Kim, Van Huy Nguyen, Sunil Kumar, Sohee Lee, Muhammad Suleman, Zhigang Jiang, Takashi Taniguchi, Kenji Watanabe, Yongho Seo
{"title":"Vacuum-assisted exfoliation method for large-area, high-quality graphene flakes in nanodevice applications","authors":"Minwook Kim,&nbsp;Van Huy Nguyen,&nbsp;Sunil Kumar,&nbsp;Sohee Lee,&nbsp;Muhammad Suleman,&nbsp;Zhigang Jiang,&nbsp;Takashi Taniguchi,&nbsp;Kenji Watanabe,&nbsp;Yongho Seo","doi":"10.1007/s42823-024-00829-8","DOIUrl":null,"url":null,"abstract":"<div><p>Mechanical exfoliation has been a preferred method for obtaining various two-dimensional (2D) materials due to its ability to produce high-quality thin flakes. However, traditional exfoliation techniques often yield flakes of limited size and low yield. Herein, we present a systematic approach to improve mechanical exfoliation by using vacuum treatment to enhance the van der Waals forces between the substrate and the 2D material. This method comprises oxygen plasma cleaning followed by vacuum treatment, effectively removing organic adsorbates from the substrate and maximizing contact between the outermost layer of 2D material and the substrate. This vacuum-assisted exfoliation approach substantially enhances both the yield and flake size of graphene, resulting in single-layer graphene (SLG) flakes approximately eighty times larger than those achieved through conventional methods. The quality of the exfoliated SLG was assessed using Raman spectroscopy and atomic force microscopy (AFM), which confirmed that it is highly similar to that obtained from conventional exfoliation. Furthermore, the exfoliated SLG flakes were encapsulated between hexagonal boron nitride (hBN) layers and fabricated into SLG field-effect transistors (FETs). These devices exhibited high-performance characteristics, yielding a field-effect mobility (µ) of approximately 110,000 <span>\\({\\text{cm}}^{2}/V \\cdot s\\)</span> at room condition, demonstrating the effectiveness of the vacuum-assisted exfoliation method in producing high-quality, large-area graphene suitable for advanced electronic applications.</p></div>","PeriodicalId":506,"journal":{"name":"Carbon Letters","volume":"35 2","pages":"803 - 812"},"PeriodicalIF":5.5000,"publicationDate":"2024-11-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Carbon Letters","FirstCategoryId":"88","ListUrlMain":"https://link.springer.com/article/10.1007/s42823-024-00829-8","RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"CHEMISTRY, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0

Abstract

Mechanical exfoliation has been a preferred method for obtaining various two-dimensional (2D) materials due to its ability to produce high-quality thin flakes. However, traditional exfoliation techniques often yield flakes of limited size and low yield. Herein, we present a systematic approach to improve mechanical exfoliation by using vacuum treatment to enhance the van der Waals forces between the substrate and the 2D material. This method comprises oxygen plasma cleaning followed by vacuum treatment, effectively removing organic adsorbates from the substrate and maximizing contact between the outermost layer of 2D material and the substrate. This vacuum-assisted exfoliation approach substantially enhances both the yield and flake size of graphene, resulting in single-layer graphene (SLG) flakes approximately eighty times larger than those achieved through conventional methods. The quality of the exfoliated SLG was assessed using Raman spectroscopy and atomic force microscopy (AFM), which confirmed that it is highly similar to that obtained from conventional exfoliation. Furthermore, the exfoliated SLG flakes were encapsulated between hexagonal boron nitride (hBN) layers and fabricated into SLG field-effect transistors (FETs). These devices exhibited high-performance characteristics, yielding a field-effect mobility (µ) of approximately 110,000 \({\text{cm}}^{2}/V \cdot s\) at room condition, demonstrating the effectiveness of the vacuum-assisted exfoliation method in producing high-quality, large-area graphene suitable for advanced electronic applications.

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来源期刊
Carbon Letters
Carbon Letters CHEMISTRY, MULTIDISCIPLINARY-MATERIALS SCIENCE, MULTIDISCIPLINARY
CiteScore
7.30
自引率
20.00%
发文量
118
期刊介绍: Carbon Letters aims to be a comprehensive journal with complete coverage of carbon materials and carbon-rich molecules. These materials range from, but are not limited to, diamond and graphite through chars, semicokes, mesophase substances, carbon fibers, carbon nanotubes, graphenes, carbon blacks, activated carbons, pyrolytic carbons, glass-like carbons, etc. Papers on the secondary production of new carbon and composite materials from the above mentioned various carbons are within the scope of the journal. Papers on organic substances, including coals, will be considered only if the research has close relation to the resulting carbon materials. Carbon Letters also seeks to keep abreast of new developments in their specialist fields and to unite in finding alternative energy solutions to current issues such as the greenhouse effect and the depletion of the ozone layer. The renewable energy basics, energy storage and conversion, solar energy, wind energy, water energy, nuclear energy, biomass energy, hydrogen production technology, and other clean energy technologies are also within the scope of the journal. Carbon Letters invites original reports of fundamental research in all branches of the theory and practice of carbon science and technology.
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