Electromigration behavior comparison between through silicon via and through dielectric via in 2.5D interposer

IF 2.8 4区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Journal of Materials Science: Materials in Electronics Pub Date : 2025-04-01 DOI:10.1007/s10854-025-14662-w

Fa Wu, Hao Li, Wei Cui, Guangyin Liu, Lun Zhang, Yang Feng, Saiyu Yang, Qin Tang, Pan Wang, Jun Shen, Zhaohuan Tang

引用次数: 0

Abstract

Through-silicon vias (TSVs) and through-dielectric vias (TDVs) are essential components in 2.5D silicon interposers, where electromigration (EM) poses a significant reliability concern. This study investigates the electromigration behavior of TSVs and TDVs within 2.5D interposers. Two distinct test structures were fabricated and subjected to electromigration testing. The results indicate that TSVs exhibit superior resistance to electromigration compared to TDVs. Failure analysis (FA) using SEM/TEM techniques and simulation with COMSOL Multiphysics software were employed. The findings confirm that electromigration is the primary cause of failure in TDV structures.

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来源期刊

Journal of Materials Science: Materials in Electronics 工程技术-材料科学：综合

CiteScore

5.00

自引率

7.10%

发文量

1931

审稿时长

2 months

期刊介绍： The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.