{"title":"10-Gb/s NRZ Per Lane Data Links With Transferred Micro-LEDs With Record BER and Energy Efficiency","authors":"Bardia Pezeshki;Alex Tselikov;Rob Kalman;Suresh Rangarajan;Ivan Huang;Jeff Pepper;Sarah Zou;Howard Rourke;Rowan Pocock;Alasdair Fikouras","doi":"10.1109/LPT.2025.3552708","DOIUrl":null,"url":null,"abstract":"We demonstrate the highest data rate links using NRZ modulation of a transferred LED. LEDs transferred onto a sapphire backplane driven by a high-speed external source are modulated at 10Gb/s NRZ for a total extrapolated bandwidth of about 3Tb/s. The transmitters consume ~1pJ/bit with a <inline-formula> <tex-math>$10^{-10}$ </tex-math></inline-formula> BER. Arrays of ~300 GaN microLEDs transferred onto a Si backplane with integrated drivers are modulated at 3.5 Gb/s for a total bandwidth of ~1Tb/s. Such highly parallel optical interconnects have the potential to greatly improve the power consumption and density of chip-to-chip communications.","PeriodicalId":13065,"journal":{"name":"IEEE Photonics Technology Letters","volume":"37 8","pages":"453-456"},"PeriodicalIF":2.3000,"publicationDate":"2025-03-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Photonics Technology Letters","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10930898/","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
We demonstrate the highest data rate links using NRZ modulation of a transferred LED. LEDs transferred onto a sapphire backplane driven by a high-speed external source are modulated at 10Gb/s NRZ for a total extrapolated bandwidth of about 3Tb/s. The transmitters consume ~1pJ/bit with a $10^{-10}$ BER. Arrays of ~300 GaN microLEDs transferred onto a Si backplane with integrated drivers are modulated at 3.5 Gb/s for a total bandwidth of ~1Tb/s. Such highly parallel optical interconnects have the potential to greatly improve the power consumption and density of chip-to-chip communications.
期刊介绍:
IEEE Photonics Technology Letters addresses all aspects of the IEEE Photonics Society Constitutional Field of Interest with emphasis on photonic/lightwave components and applications, laser physics and systems and laser/electro-optics technology. Examples of subject areas for the above areas of concentration are integrated optic and optoelectronic devices, high-power laser arrays (e.g. diode, CO2), free electron lasers, solid, state lasers, laser materials'' interactions and femtosecond laser techniques. The letters journal publishes engineering, applied physics and physics oriented papers. Emphasis is on rapid publication of timely manuscripts. A goal is to provide a focal point of quality engineering-oriented papers in the electro-optics field not found in other rapid-publication journals.