High performance all oxide thin film transistor with ink-jet printing metal oxide dielectric pattern

IF 3.9 3区材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY

Materials Science and Engineering: B Pub Date : 2025-04-01 DOI:10.1016/j.mseb.2025.118244

Kefeng Zou, Zexian Zhao, Zhenghao Gui, Meng Xu, Longlong Chen, Xifeng Li, Jianhua Zhang

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引用次数: 0

Abstract

In this paper, the effect of the printing parameters on the forming behavior of dot, line and plane for hafnium-aluminum-oxide is thoroughly investigated by simulation and experiment. First, the spreading process of inkjet droplets was been numerically simulated by using the volume of fluid model. And the optimal contact angle and drop space for printing hafnium-aluminum-oxide pattern were obtained. Ultrasonic treatment can remove some polar hydrophilic molecules on the surface of the substrate, which controlled the spreading of the printed patterns. The inkjet-print hafnium-aluminum-oxide film exhibits the permittivity of 9.3 at 100 kHz and afforded a leakage current below 10^-6 A/cm² at 2 MV. Finally, the fabricated indium-zinc-tin oxide TFTs using inkjet print exhibit mobility of 8.89 cm²v^-1s⁻¹, subthreshold swing of 0.09 V/decade and ON-OFF-current ratio of 8.69 × 10⁸. This means that inkjet printing is expected to be the leading key technology for manufacturing oxide TFT arrays.

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来源期刊

Materials Science and Engineering: B 工程技术-材料科学：综合

CiteScore

5.60

自引率

2.80%

发文量

481

审稿时长

3.5 months

期刊介绍： The journal provides an international medium for the publication of theoretical and experimental studies and reviews related to the electronic, electrochemical, ionic, magnetic, optical, and biosensing properties of solid state materials in bulk, thin film and particulate forms. Papers dealing with synthesis, processing, characterization, structure, physical properties and computational aspects of nano-crystalline, crystalline, amorphous and glassy forms of ceramics, semiconductors, layered insertion compounds, low-dimensional compounds and systems, fast-ion conductors, polymers and dielectrics are viewed as suitable for publication. Articles focused on nano-structured aspects of these advanced solid-state materials will also be considered suitable.