{"title":"An NMOS LDO with input pre-regulation technique for Sigma-Delta DAC with wide supply range","authors":"Xingyuan Tong, Yinbo Li, Xin Xin","doi":"10.1016/j.mejo.2025.106666","DOIUrl":null,"url":null,"abstract":"<div><div>An NMOS low-dropout regulator (LDO) is presented for a digital-to-analog converter with wide supply range. To widen the input voltage range of the NMOS LDO, a voltage pre-regulator and a charge pump are combined. Under high-voltage supply conditions, the input pre-regulator is employed to circumvent high-voltage transistors (HVT) and to avoid standard-voltage transistors (SVT) breakdowns. When the input voltage is low, the charge pump boosts the supply voltage of the driving circuit for ensuring enough overdrive voltage of the NMOS power transistors. Besides, a suppression circuit using negative feedback technique is also proposed to reduce the effect of the output voltage fluctuations of the charge pump and reference circuits on the accuracy of the LDO. The proposed LDO is designed with 0.18 μm BCD process and occupies an active area of 1.14 mm<sup>2</sup>. It can operate with an input voltage range of 3.3–24 V with highly SVTs and provide a load current of up to 1 A while the quiescent current is only 0.81 mA. The load and line regulation of the LDO are 0.57 μV/mA and 0.78 mV/V, respectively.</div></div>","PeriodicalId":49818,"journal":{"name":"Microelectronics Journal","volume":"159 ","pages":"Article 106666"},"PeriodicalIF":1.9000,"publicationDate":"2025-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Microelectronics Journal","FirstCategoryId":"5","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S1879239125001158","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
An NMOS low-dropout regulator (LDO) is presented for a digital-to-analog converter with wide supply range. To widen the input voltage range of the NMOS LDO, a voltage pre-regulator and a charge pump are combined. Under high-voltage supply conditions, the input pre-regulator is employed to circumvent high-voltage transistors (HVT) and to avoid standard-voltage transistors (SVT) breakdowns. When the input voltage is low, the charge pump boosts the supply voltage of the driving circuit for ensuring enough overdrive voltage of the NMOS power transistors. Besides, a suppression circuit using negative feedback technique is also proposed to reduce the effect of the output voltage fluctuations of the charge pump and reference circuits on the accuracy of the LDO. The proposed LDO is designed with 0.18 μm BCD process and occupies an active area of 1.14 mm2. It can operate with an input voltage range of 3.3–24 V with highly SVTs and provide a load current of up to 1 A while the quiescent current is only 0.81 mA. The load and line regulation of the LDO are 0.57 μV/mA and 0.78 mV/V, respectively.
期刊介绍:
Published since 1969, the Microelectronics Journal is an international forum for the dissemination of research and applications of microelectronic systems, circuits, and emerging technologies. Papers published in the Microelectronics Journal have undergone peer review to ensure originality, relevance, and timeliness. The journal thus provides a worldwide, regular, and comprehensive update on microelectronic circuits and systems.
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