{"title":"SnS2 based Extended-gate Field-Effect Transistor for low voltage pH sensing","authors":"Uvanesh Kasiviswanathan , Lucky Agarwal , Chandan Kumar , Ajay Kumar Dwivedi , Shweta Tripathi","doi":"10.1016/j.matlet.2025.138475","DOIUrl":null,"url":null,"abstract":"<div><div>This letter presents a pH sensing device based on ion exchange on the surface of <span><math><mrow><msub><mrow><mi>SnS</mi></mrow><mrow><mn>2</mn></mrow></msub></mrow></math></span> thin film for continuous monitoring. The <span><math><mrow><msub><mrow><mi>SnS</mi></mrow><mrow><mn>2</mn></mrow></msub></mrow></math></span> sensing membrane is fabricated using the sol–gel synthesis technique and deposited onto an indium tin oxide strip. The ion interaction on the <span><math><mrow><msub><mrow><mi>SnS</mi></mrow><mrow><mn>2</mn></mrow></msub></mrow></math></span> surface for pH sensing is an innovative approach in this work. The <span><math><mrow><msub><mrow><mi>SnS</mi></mrow><mrow><mn>2</mn></mrow></msub></mrow></math></span> thin film-based extended-gate FET exhibited a remarkable pH sensitivity of <span><math><mrow><mspace></mspace><mo>∼</mo><mn>41.89</mn><mspace></mspace><mi>mV</mi><mo>/</mo><mi>pH</mi></mrow></math></span>, along with outstanding linearity across pH levels ranging from 1 to 11. Additionally, the sensor demonstrates commendable stability across the linearity range, with a minimal drift rate of <span><math><mrow><mspace></mspace><mo>∼</mo><mn>2</mn><mo>.</mo><mn>1</mn><mspace></mspace><mi>mV</mi><mo>/</mo><mi>h</mi></mrow></math></span> at pH 9.</div></div>","PeriodicalId":384,"journal":{"name":"Materials Letters","volume":"391 ","pages":"Article 138475"},"PeriodicalIF":2.7000,"publicationDate":"2025-03-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Materials Letters","FirstCategoryId":"88","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0167577X2500504X","RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0
Abstract
This letter presents a pH sensing device based on ion exchange on the surface of thin film for continuous monitoring. The sensing membrane is fabricated using the sol–gel synthesis technique and deposited onto an indium tin oxide strip. The ion interaction on the surface for pH sensing is an innovative approach in this work. The thin film-based extended-gate FET exhibited a remarkable pH sensitivity of , along with outstanding linearity across pH levels ranging from 1 to 11. Additionally, the sensor demonstrates commendable stability across the linearity range, with a minimal drift rate of at pH 9.
期刊介绍:
Materials Letters has an open access mirror journal Materials Letters: X, sharing the same aims and scope, editorial team, submission system and rigorous peer review.
Materials Letters is dedicated to publishing novel, cutting edge reports of broad interest to the materials community. The journal provides a forum for materials scientists and engineers, physicists, and chemists to rapidly communicate on the most important topics in the field of materials.
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• Synthesis - Quenching, solid state, solidification, solution synthesis, vapor deposition, high pressure, explosive