Microstructure regulation and dielectric performance analysis of the high-pressure sintered nano-BaTiO₃ ceramics

IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Jing Wang, Zhanwen Ye, Yulian Liang, Ling Zhou
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引用次数: 0

Abstract

As the miniaturization of electronic devices continues to advance, increasingly stringent demands are placed on the grain refinement of BaTiO3 (BTO) functional ceramics. In this study, a single-step high-pressure sintering process was employed to rapidly fabricate nanoscale BTO ceramics. Through precise control of temperature and pressure, the abnormal grain growth was effectively suppressed during the sintering process, successfully mitigating the cleavage damage and the dielectric loss typically associated with columnar grains. Under the optimized sintering conditions of 600 °C and 2.0 GPa for 5 min, BTO ceramics exhibited an average grain size of 168 nm, which was an increase of 77% compared to the starting powder. The dielectric constant reached 2310 and the dielectric loss was 0.06. This work provides an effective reference for the rapid fabrication and microstructural control of nanoceramics.

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来源期刊
Journal of Materials Science: Materials in Electronics
Journal of Materials Science: Materials in Electronics 工程技术-材料科学:综合
CiteScore
5.00
自引率
7.10%
发文量
1931
审稿时长
2 months
期刊介绍: The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.
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