Variability Induced by Random Discrete Dopants in Source and Drain Extensions of Gate-all-around Nanosheet FETs: A Quantum Transport Simulation Study.

IF 2.9 4区 材料科学 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY
Jaehyun Lee, Tapas Dutta, Vihar Georgiev, Asen Asenov
{"title":"Variability Induced by Random Discrete Dopants in Source and Drain Extensions of Gate-all-around Nanosheet FETs: A Quantum Transport Simulation Study.","authors":"Jaehyun Lee, Tapas Dutta, Vihar Georgiev, Asen Asenov","doi":"10.1088/1361-6528/adc606","DOIUrl":null,"url":null,"abstract":"<p><p>Gate-all-around (GAA) nanosheet field-effect transistors (FETs) have significantly advanced nanoscale device technology by mitigating short-channel effects. These GAA structures are becoming essential in sub-3nm technology and are evolving into complementary FETs. Despite the reduction in variability achieved by multi-gate structures, random discrete dopants (RDDs) in source and drain regions continue to pose challenges. This study addresses the local variability induced by RDDs, particularly in the source and drain extensions in GAA nanosheet FETs. Through statistical quantum transport simulations under a ballistic approximation, we investigate parameters such as spacer length, channel width, and channel thickness. The results show that RDDs in the source and drain extensions cause not only threshold voltage variation but also increase resistance and reduce ON-state current. GAA nanosheet FETs with a 3 nm×10 nm cross-sectional channel and 5 nm spacer length exhibit 10% reduction in ON-state current compared to the ideal device, along with a standard deviation (variability) of 0.35 µA. Mitigation of these effects requires the use of thin, wide, and large cross-section nanosheets and short spacer lengths.</p>","PeriodicalId":19035,"journal":{"name":"Nanotechnology","volume":" ","pages":""},"PeriodicalIF":2.9000,"publicationDate":"2025-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Nanotechnology","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.1088/1361-6528/adc606","RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0

Abstract

Gate-all-around (GAA) nanosheet field-effect transistors (FETs) have significantly advanced nanoscale device technology by mitigating short-channel effects. These GAA structures are becoming essential in sub-3nm technology and are evolving into complementary FETs. Despite the reduction in variability achieved by multi-gate structures, random discrete dopants (RDDs) in source and drain regions continue to pose challenges. This study addresses the local variability induced by RDDs, particularly in the source and drain extensions in GAA nanosheet FETs. Through statistical quantum transport simulations under a ballistic approximation, we investigate parameters such as spacer length, channel width, and channel thickness. The results show that RDDs in the source and drain extensions cause not only threshold voltage variation but also increase resistance and reduce ON-state current. GAA nanosheet FETs with a 3 nm×10 nm cross-sectional channel and 5 nm spacer length exhibit 10% reduction in ON-state current compared to the ideal device, along with a standard deviation (variability) of 0.35 µA. Mitigation of these effects requires the use of thin, wide, and large cross-section nanosheets and short spacer lengths.

求助全文
约1分钟内获得全文 求助全文
来源期刊
Nanotechnology
Nanotechnology 工程技术-材料科学:综合
CiteScore
7.10
自引率
5.70%
发文量
820
审稿时长
2.5 months
期刊介绍: The journal aims to publish papers at the forefront of nanoscale science and technology and especially those of an interdisciplinary nature. Here, nanotechnology is taken to include the ability to individually address, control, and modify structures, materials and devices with nanometre precision, and the synthesis of such structures into systems of micro- and macroscopic dimensions such as MEMS based devices. It encompasses the understanding of the fundamental physics, chemistry, biology and technology of nanometre-scale objects and how such objects can be used in the areas of computation, sensors, nanostructured materials and nano-biotechnology.
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信