{"title":"Exploring electro-optical properties of novel two-dimensional disilicon carbide through strain engineering","authors":"Huabing Shu","doi":"10.1007/s10853-025-10793-x","DOIUrl":null,"url":null,"abstract":"<div><p>Based on theoretical calculations (PBE + <i>G</i><sub>0</sub><i>W</i><sub>0</sub> + BSE), novel two-dimensional bisilicon carbide (Si<sub>2</sub>C) monolayer is systematically investigated under biaxial strains. The stability of pristine Si<sub>2</sub>C monolayer has been confirmed by its phonon spectrum, and its dynamic stability can be kept across a broad strain range. The explored monolayer exhibiting a buckling configuration is predicted to be an indirect semiconductor with a moderate energy gap. The nature and magnitude of the bandgap can be significantly modulated through strain engineering, wherein a tensile strain of + 3.2% induces an indirect-direct bandgap transition. In addition, pristine Si<sub>2</sub>C monolayer shows a significant light absorption (> 10<sup>6</sup> cm<sup>−1</sup>) for the visible part of incident solar radiation. Tensile strain can induce a prominent red-shift in the optical spectrum and significantly enhance near-infrared light absorption. As a result, the strain-tuned properties of novel Si<sub>2</sub>C monolayer render it a promising semiconductor for optoelectronic applications.</p><h3>Graphical abstract</h3><p>Electro-optical properties of novel two-dimensional disilicon carbide under strains.</p>\n<div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":645,"journal":{"name":"Journal of Materials Science","volume":"60 12","pages":"5459 - 5472"},"PeriodicalIF":3.5000,"publicationDate":"2025-03-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Materials Science","FirstCategoryId":"88","ListUrlMain":"https://link.springer.com/article/10.1007/s10853-025-10793-x","RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0
Abstract
Based on theoretical calculations (PBE + G0W0 + BSE), novel two-dimensional bisilicon carbide (Si2C) monolayer is systematically investigated under biaxial strains. The stability of pristine Si2C monolayer has been confirmed by its phonon spectrum, and its dynamic stability can be kept across a broad strain range. The explored monolayer exhibiting a buckling configuration is predicted to be an indirect semiconductor with a moderate energy gap. The nature and magnitude of the bandgap can be significantly modulated through strain engineering, wherein a tensile strain of + 3.2% induces an indirect-direct bandgap transition. In addition, pristine Si2C monolayer shows a significant light absorption (> 106 cm−1) for the visible part of incident solar radiation. Tensile strain can induce a prominent red-shift in the optical spectrum and significantly enhance near-infrared light absorption. As a result, the strain-tuned properties of novel Si2C monolayer render it a promising semiconductor for optoelectronic applications.
Graphical abstract
Electro-optical properties of novel two-dimensional disilicon carbide under strains.
期刊介绍:
The Journal of Materials Science publishes reviews, full-length papers, and short Communications recording original research results on, or techniques for studying the relationship between structure, properties, and uses of materials. The subjects are seen from international and interdisciplinary perspectives covering areas including metals, ceramics, glasses, polymers, electrical materials, composite materials, fibers, nanostructured materials, nanocomposites, and biological and biomedical materials. The Journal of Materials Science is now firmly established as the leading source of primary communication for scientists investigating the structure and properties of all engineering materials.