Azobenzene based optically driven fiber-optic self-sensing sub-nanometer relay integrated on mechanically controllable break junction chip

IF 4.1 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Sensors and Actuators A-physical Pub Date : 2025-03-26 DOI:10.1016/j.sna.2025.116516

Jia-Zheng Sun , Yang Zhang , Ling-Xin Kong , Li-Fa Ni , Xue-Yuan Li , Hu Liang , Zhou-Xiang Wang , Yuan Xu , Yan Zuo

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Abstract

We propose a novel subnanometer relay integrating a mechanically controllable break junction (MCBJ) as a nanogap controller, a fiber-optic localized surface plasmon resonance (LSPR) nanoprobe for detection, and azobenzene-functionalized gold nanoparticles (AuNPs) as a UV-driven actuator. The self-fabricated MCBJ achieves subnanometer gap control with an attenuation factor of 10⁻⁵. The tapered fiber nanoprobe, decorated with AuNPs, excites LSPR for real-time sensing, while the azobenzene-liquid crystal elastomer coating enables UV-responsive actuation (-1.06 nm/mW/cm² sensitivity). Light-induced azobenzene conformational changes modulate the AuNP-mediated nanogap, enabling optical switching and logic operations. This architecture merges photonic control with molecular-scale mechanics, offering a new platform for optically reconfigurable nano-optoelectronic circuits.

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集成在机械可控断结芯片上的基于偶氮苯的光驱动光纤自传感亚纳米继电器

我们提出了一种新型亚纳米继电器，集成了机械可控断结（MCBJ）作为纳米间隙控制器，光纤局部表面等离子体共振（LSPR）纳米探针用于检测，偶氮苯功能化金纳米粒子（AuNPs）作为紫外驱动致动器。自制的MCBJ实现了亚纳米间隙控制，衰减系数为10−5。锥形纤维纳米探针，装饰有AuNPs，激发LSPR进行实时传感，而偶氮苯液晶弹性体涂层实现紫外线响应驱动（-1.06 nm/mW/cm2灵敏度）。光诱导的偶氮苯构象变化调节aunp介导的纳米间隙，使光开关和逻辑操作成为可能。这种结构将光子控制与分子尺度力学相结合，为光学可重构的纳米光电电路提供了一个新的平台。

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来源期刊

Sensors and Actuators A-physical 工程技术-工程：电子与电气

CiteScore

8.10

自引率

6.50%

发文量

630

审稿时长

49 days

期刊介绍： Sensors and Actuators A: Physical brings together multidisciplinary interests in one journal entirely devoted to disseminating information on all aspects of research and development of solid-state devices for transducing physical signals. Sensors and Actuators A: Physical regularly publishes original papers, letters to the Editors and from time to time invited review articles within the following device areas: • Fundamentals and Physics, such as: classification of effects, physical effects, measurement theory, modelling of sensors, measurement standards, measurement errors, units and constants, time and frequency measurement. Modeling papers should bring new modeling techniques to the field and be supported by experimental results. • Materials and their Processing, such as: piezoelectric materials, polymers, metal oxides, III-V and II-VI semiconductors, thick and thin films, optical glass fibres, amorphous, polycrystalline and monocrystalline silicon. • Optoelectronic sensors, such as: photovoltaic diodes, photoconductors, photodiodes, phototransistors, positron-sensitive photodetectors, optoisolators, photodiode arrays, charge-coupled devices, light-emitting diodes, injection lasers and liquid-crystal displays. • Mechanical sensors, such as: metallic, thin-film and semiconductor strain gauges, diffused silicon pressure sensors, silicon accelerometers, solid-state displacement transducers, piezo junction devices, piezoelectric field-effect transducers (PiFETs), tunnel-diode strain sensors, surface acoustic wave devices, silicon micromechanical switches, solid-state flow meters and electronic flow controllers. Etc...