Vanadium doping as a key factor for superior NH3 sensing at room temperature in MoSe2/TiO2 composites

IF 4.1 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Virendra Singh Choudhary , Sunil Gangwar , C.S. Yadav , Sandeep Sharma , Marcio A.P. Almeida , Surender Kumar Sharma
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引用次数: 0

Abstract

The detection of ammonia is critical in various industrial and environmental applications due to its toxicity and contribution to air pollution. Effective ammonia sensors are essential for monitoring emissions in agricultural, chemical, and manufacturing processes, as well as for ensuring workplace safety and regulatory compliance. The present work investigates the gas sensing performance of vanadium-doped titanium dioxide/molybdenum diselenide (VTOMS) composite against ammonia in comparison to different volatile organic compounds. Interestingly, VTOMS demonstrated significantly higher sensitivity and selectivity towards ammonia in comparison to other volatile organic compounds. A comprehensive analysis of key sensing parameters revealed that the composite material exhibits superior performance over the molybdenum diselenide and titanium dioxide, showing a remarkable response time of 94 seconds and a recovery time of 50 seconds. The sensitivity of the sensor is ∼ 3.05 per part per million with a noise standard deviation of ∼ 0.305. The limit of detection for the sensor is found to be approximately 0.3 parts per million(ppm), indicating that the sensor is capable of detecting very low concentrations of ammonia. The study demonstrates significant potential of the molybdenum diselenide/vanadium-doped titanium dioxide (VTOMS) composite as a high-performance ammonia sensor, offering improved sensitivity, selectivity, and rapid response characteristics, which make it an ideal candidate for practical applications where accurate ammonia detection is critical.
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来源期刊
Sensors and Actuators A-physical
Sensors and Actuators A-physical 工程技术-工程:电子与电气
CiteScore
8.10
自引率
6.50%
发文量
630
审稿时长
49 days
期刊介绍: Sensors and Actuators A: Physical brings together multidisciplinary interests in one journal entirely devoted to disseminating information on all aspects of research and development of solid-state devices for transducing physical signals. Sensors and Actuators A: Physical regularly publishes original papers, letters to the Editors and from time to time invited review articles within the following device areas: • Fundamentals and Physics, such as: classification of effects, physical effects, measurement theory, modelling of sensors, measurement standards, measurement errors, units and constants, time and frequency measurement. Modeling papers should bring new modeling techniques to the field and be supported by experimental results. • Materials and their Processing, such as: piezoelectric materials, polymers, metal oxides, III-V and II-VI semiconductors, thick and thin films, optical glass fibres, amorphous, polycrystalline and monocrystalline silicon. • Optoelectronic sensors, such as: photovoltaic diodes, photoconductors, photodiodes, phototransistors, positron-sensitive photodetectors, optoisolators, photodiode arrays, charge-coupled devices, light-emitting diodes, injection lasers and liquid-crystal displays. • Mechanical sensors, such as: metallic, thin-film and semiconductor strain gauges, diffused silicon pressure sensors, silicon accelerometers, solid-state displacement transducers, piezo junction devices, piezoelectric field-effect transducers (PiFETs), tunnel-diode strain sensors, surface acoustic wave devices, silicon micromechanical switches, solid-state flow meters and electronic flow controllers. Etc...
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