Effect of elemental concentration on the opto-electronic and thermoelectric properties of Zintl phase SrInAs system

IF 3.3 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Optical and Quantum Electronics Pub Date : 2025-03-28 DOI:10.1007/s11082-025-08156-6

Shahid Mehmood, Mahtab Khan, Shah Rukh Khan, Rahman Zada, Zahid Ali, Mohamed Mousa

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Abstract

Opto-electronic and thermoelectric properties of derivatives of the Zintl phase ternary SrInAs system are carried out in P63/mmc, Pnma, Pnnm and Pbam space groups via DFT through WEIN2K to find out the effect of elemental concentration on their physical properties. SrIn₂As₂, Sr₃InAs₃, Sr₃In₂As₄ compounds are direct bandgap semiconductors at r symmetry point, and Sr₅In₂As₆ is direct bandgap semiconductor at M symmetry point. The direct bandgap nature is indicated by their electronic properties, range between 0.08 and 0.76 eV. The bandgap of these compounds changes with variation in elemental concentration. All materials are active in the infrared spectrum because of their optical properties. Their optical dynamic properties make them potential candidates for application in optoelectronic devices. Their Seebeck coefficient and power factor make them excellent thermoelectric materials for thermoelectric power generation as nano-thermocouples and the greater elemental concentration in Sr₅In₂As₆ make them efficient thermoelectric materials among the series.

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来源期刊

Optical and Quantum Electronics 工程技术-工程：电子与电气

CiteScore

4.60

自引率

20.00%

发文量

810

审稿时长

3.8 months

期刊介绍： Optical and Quantum Electronics provides an international forum for the publication of original research papers, tutorial reviews and letters in such fields as optical physics, optical engineering and optoelectronics. Special issues are published on topics of current interest. Optical and Quantum Electronics is published monthly. It is concerned with the technology and physics of optical systems, components and devices, i.e., with topics such as: optical fibres; semiconductor lasers and LEDs; light detection and imaging devices; nanophotonics; photonic integration and optoelectronic integrated circuits; silicon photonics; displays; optical communications from devices to systems; materials for photonics (e.g. semiconductors, glasses, graphene); the physics and simulation of optical devices and systems; nanotechnologies in photonics (including engineered nano-structures such as photonic crystals, sub-wavelength photonic structures, metamaterials, and plasmonics); advanced quantum and optoelectronic applications (e.g. quantum computing, memory and communications, quantum sensing and quantum dots); photonic sensors and bio-sensors; Terahertz phenomena; non-linear optics and ultrafast phenomena; green photonics.