Room temperature NO2 sensing performance of ZnO nanorods modified VO2(B) nanosheets interlaced self-assembly nanoflowers

IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Jiran Liang, Wanwan Tai, Penghui Ge, Xiaoping Gao, Hairun Zhang, Hao Chen, Yu Han
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Abstract

In this work, VO2(B) nanoflower–ZnO nanorod composite structures were proposed to enhance the sensing performance of VO2(B) nanosheets to NO2 at room temperature. VO2(B) nanoflower composed of nanosheets and ZnO nanorods composite structures with uniform size were synthesized by a combination method of hydrothermal and water bath. The effects of hydrothermal time on the morphology and gas-sensitive performance of VO2(B) nanoflowers, and the effect of ZnO content on the room temperature NO2 sensing performance of VO2(B) nanoflowers–ZnO nanorods composite structures were investigated. The VO2(B) nanoflower–ZnO nanorod composite structure shows a response of 4.96 to 5 ppm NO2, with an enhancement of up to 212% compared to VO2(B) nanoflower. The improvement in NO2 sensing performance can be attributed to an increase in the specific surface area of VO2(B) nanoflowers, an increase in the number of homojunctions in VO2(B) nanoflowers, and a synergistic effect of n–n heterojunction sensitization. Therefore, the activation of VO2(B) with ZnO may be a promising approach for the design and fabrication of high-performance room temperature gas sensors.

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来源期刊
Journal of Materials Science: Materials in Electronics
Journal of Materials Science: Materials in Electronics 工程技术-材料科学:综合
CiteScore
5.00
自引率
7.10%
发文量
1931
审稿时长
2 months
期刊介绍: The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.
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