Flexible Low-Power Digital Circuits With Unipolar Amorphous Silicon Thin-Film Transistors

Shubham Ranjan;Sparsh Kapar;Czang-Ho Lee;William S. Wong;Manoj Sachdev
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Abstract

Thin-film transistor (TFT) technology has demonstrated its effectiveness in large-area cost-efficient applications such as displays, flexible electronics, and medical devices. However, TFTs are typically unipolar in nature, and therefore, the realization of CMOS-like digital circuits is challenging. Traditional methods for implementing logic gates and complex circuits with unipolar TFT devices lead to high static power consumption and limited output swing. While various mitigation techniques have been developed, they fail to eliminate the direct path current problem in these circuits, which hinders static power reduction. The objective of this study is to address these issues and study its effect on flexible substrate. In this article, we propose logic gates that address these issues using a half-latch circuit. To demonstrate the concept, a 3-to-8 decoder was built using only n-type amorphous silicon (a-Si:H) TFTs on both glass and flexible substrates. We analyzed the impact of bending and substrate materials on the design. It was observed that the TFTs show an increase in current up to 8% under tensile stress, while a decrease in current up to 4% under compressive stress on flexible substrate. Measurements indicate that the proposed design reduces the average total power consumption of the 3-to-8 decoder by 46.5% compared with state-of-the-art techniques under various conditions.
单极非晶硅薄膜晶体管柔性低功耗数字电路
薄膜晶体管(TFT)技术在显示器、柔性电子产品和医疗设备等大面积低成本应用中已经证明了其有效性。然而,tft本质上通常是单极的,因此,实现类似cmos的数字电路是具有挑战性的。用单极TFT器件实现逻辑门和复杂电路的传统方法导致高静态功耗和有限的输出摆幅。虽然已经开发了各种缓解技术,但它们无法消除这些电路中的直接路径电流问题,这阻碍了静态功率的降低。本研究的目的是解决这些问题,并研究其对柔性基板的影响。在本文中,我们提出了使用半锁存电路来解决这些问题的逻辑门。为了证明这一概念,在玻璃和柔性衬底上仅使用n型非晶硅(a- si:H) tft构建了3到8解码器。我们分析了弯曲和基板材料对设计的影响。结果表明,在拉伸应力下,TFTs的电流增加了8%,而在柔性衬底上的压应力下,电流减少了4%。测量表明,在各种条件下,与最先进的技术相比,所提出的设计将3-to-8解码器的平均总功耗降低了46.5%。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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