Applications of wide bandgap semiconductors in electric traction drives: Current trends and future perspectives

Abstract

As the demand for highly efficient Electric Vehicles (EVs) continues to rise, developing highly efficient traction drives is imperative, as they are pivotal in determining the vehicle's performance and overall range. Wide bandgap semiconductors, such as Silicon Carbide (SiC) and Gallium Nitride (GaN), are at the forefront of enhancing the efficiency and performance of traction drives in electric vehicles, offering substantial improvements over conventional silicon-based semiconductors. By leveraging the superior electrical properties, wide bandgap-based traction drives can achieve high switching frequencies, better thermal management, and reduced power dissipation. This paper provides a comprehensive overview of the current state of wide bandgap semiconductor technology and its promising applications in traction drives of next-generation electric vehicles. This review thoroughly examines the recent research studies on SiC and GaN traction drives. Additionally, it delves into various inverter configurations, such as two-level (2L), multi-level inverters (MLI), and current source inverters (CSI), providing a detailed analysis of their advantages and limitations. Finally, future directions, and research gaps associated with wide bandgap devices and traction inverters are addressed. Silicon Carbide (SiC) devices are more mature in production compared to Gallium Nitride (GaN). The literature review consistently identifies SiC semiconductors as the most preferred WBG device across various inverter configurations, particularly due to their maturity and higher breakdown voltage levels. In contrast, GaN is highly favored in applications involving multi-level inverters.