A theoretical study to investigate the performance of a MgZnO/ZnO MOSHEMT to detect bio-materials

Abstract

In this theoretical work, a Metal Oxide Semiconductor High Electron Mobility Transistor (MOSHEMT)-based on MgZnO/ZnO heterostructure has been studied to detect bio-materials. A nanogap cavity below the gate region acts as a sensing surface area to detect biomolecules. The effective capacitance of the device has been modulated by the immobile biomolecules and the electrical performance of the device changes accordingly. The expression of threshold voltage has been derived considering the presence of biomolecule and following that shift in threshold voltage, the nature of the biomolecule present can be predicted. In addition to the threshold voltage, the shift in drain current in the presence of biomolecules can also be a useful biomarker in order to detect the biomaterials.