Broadband MgGa2O4:Cr3+ Spinel with High Luminescence Thermal Stability for Near-Infrared Phosphor-Converted Light-Emitting Diodes

Reshmi T. Parayil, Santosh K. Gupta*, Brindaban Modak, Malini Abraham, Giri Dhari Patra, Saman Arif Jabri, Subrata Das and Manoj Mohapatra, 
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引用次数: 0

Abstract

Near-infrared (NIR) phosphor-converted light-emitting diodes (pc-LEDs) are emerging as promising light sources for applications in nondestructive testing, plant growth enhancement, and night vision. However, designing an NIR phosphor with high emission efficiency, excellent luminescence thermal stability, and a broad emission range remains a significant challenge. In this study, we synthesized MgGa2O4:Cr3+ (MGO-Cr) phosphors using a solid-state reaction. These phosphors emit a broad NIR light ranging from 650 to 1300 nm, with an outstanding full width at half-maximum (FWHM) of 269 nm, indicating their ability to cover a wide emission range. The internal quantum efficiency of the phosphor is 73%, which is indicative of efficient radiative recombination. Furthermore, the phosphors exhibit excellent luminescence thermal stability, with an intensity ratio of I423 K/I298 K = 81%, demonstrating their ability to maintain stable emission at elevated temperatures─an important characteristic for practical device applications. The investigation focuses on the site occupancy of Cr3+ ions within the crystal lattice and explores the relationship between the luminescent centers and emission spectra of Cr3+. This includes an analysis of crystal field strength, photoluminescence excitation and emission spectra, and decay lifetimes, which supports the theoretical calculations. This comprehensive study provides valuable insight into the structural and electronic factors that govern the performance of MgGa2O4:Cr3+ as an NIR phosphor. Additionally, an NIR pc-LED device was fabricated using the synthesized NIR phosphor to demonstrate its potential for practical and spectroscopic applications. These findings highlight the potential of MgGa2O4:Cr3+ phosphors as efficient NIR emitters for pc-LED applications. The excellent emission properties, thermal stability, and successful fabrication of NIR pc-LED devices demonstrate their promising applicability in various fields. This work provides valuable insights into the design of advanced NIR phosphors for next-generation lighting technologies.

Abstract Image

近红外磷转换发光二极管用高发光热稳定性宽带MgGa2O4:Cr3+尖晶石
近红外(NIR)磷转换发光二极管(pc- led)在无损检测、植物生长增强和夜视等领域的应用前景广阔。然而,设计一种具有高发射效率、优异的发光热稳定性和宽发射范围的近红外荧光粉仍然是一个重大挑战。在本研究中,我们采用固态反应合成了MgGa2O4:Cr3+ (MGO-Cr)荧光粉。这些荧光粉可以发射650 ~ 1300 nm的宽近红外光,半最大宽(FWHM)达到269 nm,表明它们能够覆盖较宽的发射范围。该荧光粉的内量子效率为73%,表明其具有高效的辐射复合。此外,荧光粉表现出优异的发光热稳定性,强度比为I423 K/I298 K = 81%,表明它们能够在高温下保持稳定的发射,这是实际器件应用的重要特性。重点研究了Cr3+离子在晶格中的位置占用,并探讨了Cr3+的发光中心与发射光谱之间的关系。这包括晶体场强、光致发光激发和发射光谱以及衰变寿命的分析,这支持了理论计算。这项全面的研究对影响MgGa2O4:Cr3+作为近红外荧光粉性能的结构和电子因素提供了有价值的见解。此外,利用合成的近红外荧光粉制备了近红外pc-LED器件,以证明其在实际和光谱应用方面的潜力。这些发现突出了MgGa2O4:Cr3+荧光粉作为pc-LED应用的高效近红外发射器的潜力。近红外pc-LED器件优异的发射性能、热稳定性和成功的制造证明了其在各个领域的应用前景。这项工作为下一代照明技术的先进近红外荧光粉的设计提供了有价值的见解。
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来源期刊
ACS Applied Optical Materials
ACS Applied Optical Materials 材料科学-光学材料-
CiteScore
1.10
自引率
0.00%
发文量
0
期刊介绍: ACS Applied Optical Materials is an international and interdisciplinary forum to publish original experimental and theoretical including simulation and modeling research in optical materials complementing the ACS Applied Materials portfolio. With a focus on innovative applications ACS Applied Optical Materials also complements and expands the scope of existing ACS publications that focus on fundamental aspects of the interaction between light and matter in materials science including ACS Photonics Macromolecules Journal of Physical Chemistry C ACS Nano and Nano Letters.The scope of ACS Applied Optical Materials includes high quality research of an applied nature that integrates knowledge in materials science chemistry physics optical science and engineering.
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