Study of the Electrical Behavior of CsPbBr3 Single Crystal and Films under Visible and High-Energy Photons

Abstract

CsPbBr₃ is a promising material due to its capability to detect high-energy radiation and applications in solar materials. A detailed study of the electrical behavior under γ-radiation is crucial for understanding the effects of radiation. In this work, we have studied the electrical behavior of CsPbBr₃ single crystal and undoped and poly(methyl methacrylate) (PMMA)-doped films of CsPbBr₃. We have introduced a new method for the growth of undoped and doped films. The X-ray diffraction (XRD) and energy-dispersive X-ray spectroscopy (EDS) analysis show the quality of the undoped, and PMMA-doped films is comparable to that of a single crystal (SC) based on purity. The current–voltage characteristic indicates that the SC and undoped film are more sensitive to ultraviolet light, but the PMMA-doped film is more sensitive to 532 nm. Also, the current under γ-radiation is lower than the dark current for SC and undoped film while is greater for PMMA-doped film when traced from 0 to −20 V. While the current–time characteristics indicate the current under γ-radiation is less negative than the dark current collected at −20 V for SC, undoped, and PMMA-doped films. The mobility-lifetime product is highest for SC, moderate for undoped film, and lowest for PMMA-doped film. These findings clarify some of the understanding of the device physics under visible and high-energy photons for optoelectronic and high-energy radiation detection.