Non-Volatile Reconfigurable Four-Mode van der Waals Transistors and Transformable Logic Circuits

IF 16 1区 材料科学 Q1 CHEMISTRY, MULTIDISCIPLINARY
ACS Nano Pub Date : 2025-03-27 DOI:10.1021/acsnano.4c16862
Junzhe Kang, Hanwool Lee, Ashwin Tunga, Xiaotong Xu, Ye Lin, Zijing Zhao, Hojoon Ryu, Chun-Chia Tsai, Takashi Taniguchi, Kenji Watanabe, Shaloo Rakheja, Wenjuan Zhu
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Abstract

Emerging applications in data-intensive computing and circuit security demand logic circuits with high functional density, reconfigurability, and energy efficiency. Here, we demonstrate nonvolatile reconfigurable four-mode field-effect transistors (NVR4M-FETs) based on two-dimensional (2D) MoTe2 and CuInP2S6 (CIPS), offering both polarity switching and threshold voltage modulation. The device exploits the ferroelectric polarization of CIPS at the source/drain regions to achieve dynamic control over the transistor polarity, enabling transitions between n-type and p-type states through polarization-induced local electrostatic doping. Additionally, multilayer graphene floating gates are incorporated to modulate the threshold voltage, yielding four distinct nonvolatile operating modes: n-type logic, p-type logic, always-on memory, and always-off memory. Leveraging the four-mode property, the NVR4M-FET can function as a one-transistor-per-bit ternary content-addressable memory (TCAM). In addition, we demonstrate the construction of transformable logic gates with 14 distinct logic functions using two NVR4M-FETs and a reconfigurable half a dder/subtractor using three NVR4M-FETs integrated with load resistors. Furthermore, we show that a 2-input look-up table can be achieved with eight NVR4M-FETs compared to 12 transistors using reconfigurable transistors, highlighting the potential of NVR4M-FETs for high-density logic circuits. These results underscore the potential of NVR4M-FETs as essential building blocks for energy-efficient, in-memory computing, and secure hardware applications.

Abstract Image

非易失性可重构四模范德华晶体管和可变换逻辑电路
数据密集型计算和电路安全领域的新兴应用要求逻辑电路具有高功能密度、可重构性和高能效。在这里,我们展示了基于二维(2D) MoTe2和CuInP2S6 (CIPS)的非易失性可重构四模场效应晶体管(nvr4m - fet),提供极性开关和阈值电压调制。该器件利用源极/漏极区CIPS的铁电极化来实现对晶体管极性的动态控制,通过极化诱导的局部静电掺杂实现n型和p型状态之间的转换。此外,多层石墨烯浮动栅极被用于调制阈值电压,产生四种不同的非易失性工作模式:n型逻辑,p型逻辑,永开存储器和永关存储器。利用四模特性,NVR4M-FET可以作为每比特一个晶体管的三元内容可寻址存储器(TCAM)。此外,我们演示了使用两个nvrm - fet构建具有14种不同逻辑功能的可转换逻辑门,以及使用三个集成负载电阻的nvrm - fet构建可重构半进位/减法器。此外,我们表明,与使用可重构晶体管的12个晶体管相比,使用8个nvr4m - fet可以实现2输入查找表,突出了nvr4m - fet用于高密度逻辑电路的潜力。这些结果强调了nvr4m - fet作为节能、内存计算和安全硬件应用的重要组成部分的潜力。
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来源期刊
ACS Nano
ACS Nano 工程技术-材料科学:综合
CiteScore
26.00
自引率
4.10%
发文量
1627
审稿时长
1.7 months
期刊介绍: ACS Nano, published monthly, serves as an international forum for comprehensive articles on nanoscience and nanotechnology research at the intersections of chemistry, biology, materials science, physics, and engineering. The journal fosters communication among scientists in these communities, facilitating collaboration, new research opportunities, and advancements through discoveries. ACS Nano covers synthesis, assembly, characterization, theory, and simulation of nanostructures, nanobiotechnology, nanofabrication, methods and tools for nanoscience and nanotechnology, and self- and directed-assembly. Alongside original research articles, it offers thorough reviews, perspectives on cutting-edge research, and discussions envisioning the future of nanoscience and nanotechnology.
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