Xiaokun Yang, Donglin Lu, Rui He, Yang Chen, Zheyi Lu, Liting Liu, Songlong Liu, Quanyang Tao, Likuan Ma, Shuimei Ding, Xiao Liu, Yunxin Li, Yiliu Wang, Lei Liao, Yuan Liu
{"title":"van der Waals Lamination for Effective Bottom Channel Modulation of Oxide Transistors","authors":"Xiaokun Yang, Donglin Lu, Rui He, Yang Chen, Zheyi Lu, Liting Liu, Songlong Liu, Quanyang Tao, Likuan Ma, Shuimei Ding, Xiao Liu, Yunxin Li, Yiliu Wang, Lei Liao, Yuan Liu","doi":"10.1021/acs.nanolett.5c00313","DOIUrl":null,"url":null,"abstract":"Plasma treatment has been widely used to improve the performance of oxide transistors. However, the real active channel of the back-gated transistors is typically buried close to the dielectric interface and cannot be effectively modulated by plasmas. In this work, we report a bottom plasma treatment strategy that can directly modulate the oxide channel. Within this process, the as-deposited oxide channel could be physically peeled off from the sacrificial wafer using the van der Waals delamination process, exposing the bottom channel region for direct plasma treatment. After treatment, indium gallium zinc oxide (IGZO) transistors exhibit a large on–off ratio of 4 × 10<sup>8</sup> and high carrier mobility over 25 cm<sup>2</sup> V<sup>–1</sup> s<sup>–1</sup>, which is over 4 times higher compared to the control device with conventional top plasma treatment. Furthermore, detailed X-ray photoelectron spectroscopy measurements confirm that the improved performance originates from the passivation of oxygen vacancy and nitrogen doping within the active bottom channel region.","PeriodicalId":53,"journal":{"name":"Nano Letters","volume":"56 1","pages":""},"PeriodicalIF":9.6000,"publicationDate":"2025-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Nano Letters","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.1021/acs.nanolett.5c00313","RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"CHEMISTRY, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0
Abstract
Plasma treatment has been widely used to improve the performance of oxide transistors. However, the real active channel of the back-gated transistors is typically buried close to the dielectric interface and cannot be effectively modulated by plasmas. In this work, we report a bottom plasma treatment strategy that can directly modulate the oxide channel. Within this process, the as-deposited oxide channel could be physically peeled off from the sacrificial wafer using the van der Waals delamination process, exposing the bottom channel region for direct plasma treatment. After treatment, indium gallium zinc oxide (IGZO) transistors exhibit a large on–off ratio of 4 × 108 and high carrier mobility over 25 cm2 V–1 s–1, which is over 4 times higher compared to the control device with conventional top plasma treatment. Furthermore, detailed X-ray photoelectron spectroscopy measurements confirm that the improved performance originates from the passivation of oxygen vacancy and nitrogen doping within the active bottom channel region.
期刊介绍:
Nano Letters serves as a dynamic platform for promptly disseminating original results in fundamental, applied, and emerging research across all facets of nanoscience and nanotechnology. A pivotal criterion for inclusion within Nano Letters is the convergence of at least two different areas or disciplines, ensuring a rich interdisciplinary scope. The journal is dedicated to fostering exploration in diverse areas, including:
- Experimental and theoretical findings on physical, chemical, and biological phenomena at the nanoscale
- Synthesis, characterization, and processing of organic, inorganic, polymer, and hybrid nanomaterials through physical, chemical, and biological methodologies
- Modeling and simulation of synthetic, assembly, and interaction processes
- Realization of integrated nanostructures and nano-engineered devices exhibiting advanced performance
- Applications of nanoscale materials in living and environmental systems
Nano Letters is committed to advancing and showcasing groundbreaking research that intersects various domains, fostering innovation and collaboration in the ever-evolving field of nanoscience and nanotechnology.