Characteristics of aluminum-doped SnO₂in various positions using super-cycle ALD.

IF 2.9 4区材料科学 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY

Nanotechnology Pub Date : 2025-04-02 DOI:10.1088/1361-6528/adc4ef

Jangho Bae, Hyeongtag Jeon

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引用次数: 0

Abstract

Metal oxide has attracted increasing interest because of its low resistivity, high transmittance, and flexibility. Among many metal oxide materials, tin dioxide (SnO₂), which has a low melting point and wide bandgap (3.6-4.0 eV), has properties suitable for applications such as transparent conductive oxides and thin film transistors. However, SnO₂has high oxygen vacancies (O_vac) and conductivity, reducing the on/off current ratio. To address this issue, we proposed an aluminum (Al) doping strategy using a super-cycle atomic layer deposition (ALD) process, which offers precise doping position control and uniform thickness. The effect of Al dopants used as the carrier suppressor in SnO₂was studied with different doping positions to investigate their impact on reducing O_vacand improving the off-current characteristics. The film properties were analyzed by AES, XRD, transmission electron microscopy, x-ray photoelectron spectroscopy, and Hall measurement, and the device property was analyzed byI-Vmeasurements. The results revealed that Al doping in the middle region of the SnO₂thin film led to the most significant reduction in carrier concentration (1.31 × 10²⁰cm^-3) and O_vac(17.2%), thereby enhancing the SnO₂film properties and off-current characteristics. These findings demonstrate that precise doping control via super-cycle ALD can effectively modulate the electrical properties of SnO₂-based devices.

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来源期刊

Nanotechnology 工程技术-材料科学：综合

CiteScore

7.10

自引率

5.70%

发文量

820

审稿时长

2.5 months

期刊介绍： The journal aims to publish papers at the forefront of nanoscale science and technology and especially those of an interdisciplinary nature. Here, nanotechnology is taken to include the ability to individually address, control, and modify structures, materials and devices with nanometre precision, and the synthesis of such structures into systems of micro- and macroscopic dimensions such as MEMS based devices. It encompasses the understanding of the fundamental physics, chemistry, biology and technology of nanometre-scale objects and how such objects can be used in the areas of computation, sensors, nanostructured materials and nano-biotechnology.