Ian Anderson, Omar Barrera, Nishanth Ravi, Lezli Matto, Kapil Saha, Supratik Dasgupta, Joshua Campbell, Jack Kramer, Eugene Kwon, Tzu-Hsuan Hsu, Sinwoo Cho, Pietro Simeoni, Jue Hou, Matteo Rinaldi, Mark S Goorsky, Ruochen Lu
{"title":"Solidly Mounted Scandium Aluminum Nitride on Acoustic Bragg Reflector Platforms at 14-20 GHz.","authors":"Ian Anderson, Omar Barrera, Nishanth Ravi, Lezli Matto, Kapil Saha, Supratik Dasgupta, Joshua Campbell, Jack Kramer, Eugene Kwon, Tzu-Hsuan Hsu, Sinwoo Cho, Pietro Simeoni, Jue Hou, Matteo Rinaldi, Mark S Goorsky, Ruochen Lu","doi":"10.1109/TUFFC.2025.3554597","DOIUrl":null,"url":null,"abstract":"<p><p>This paper reports the first groups of low-loss acoustic solidly mounted resonators (SMR) and acoustic delay lines (ADL) at 14-20 GHz. Bulk acoustic waves (BAW) are confined in thin-film scandium aluminum nitride (ScAlN) on top of dielectric acoustic Bragg reflectors, consisting of alternating silicon dioxide with tantalum pentoxide (Ta<sub>2</sub>O<sub>5</sub>/SiO<sub>2</sub>) or niobium pentoxide (Nb<sub>2</sub>O<sub>5</sub>/SiO<sub>2</sub>) on Si carrier wafers. Stack material parameters are extracted via high-resolution X-ray diffraction (HRXRD) and X-ray reflectivity (XRR). The simulation and experiment show confinement for longitudinal BAW from 14-20 GHz. ADLs show high propagation Q above 478 and 171 for Ta<sub>2</sub>O<sub>5</sub>/SiO<sub>2</sub> and Nb<sub>2</sub>O<sub>5</sub>/SiO<sub>2</sub>, respectively. SMRs in both stacks perform similarly, showing coupling coefficient (k<sup>2</sup>) of 2.0%, series Q (Q<sub>s</sub>) of 156, and parallel Q (Qp) values of 140 for Ta<sub>2</sub>O<sub>5</sub>/SiO<sub>2</sub>, while k<sup>2</sup> of 2.4%, Q<sub>s</sub> of 140, and Qp of 109 for Nb<sub>2</sub>O<sub>5</sub>/SiO<sub>2</sub>, both at 18.6 GHz. Upon development, ScAlN solidly mounted platforms will enable signal processing elements with better power handling.</p>","PeriodicalId":13322,"journal":{"name":"IEEE transactions on ultrasonics, ferroelectrics, and frequency control","volume":"PP ","pages":""},"PeriodicalIF":3.0000,"publicationDate":"2025-03-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE transactions on ultrasonics, ferroelectrics, and frequency control","FirstCategoryId":"5","ListUrlMain":"https://doi.org/10.1109/TUFFC.2025.3554597","RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"ACOUSTICS","Score":null,"Total":0}
引用次数: 0
Abstract
This paper reports the first groups of low-loss acoustic solidly mounted resonators (SMR) and acoustic delay lines (ADL) at 14-20 GHz. Bulk acoustic waves (BAW) are confined in thin-film scandium aluminum nitride (ScAlN) on top of dielectric acoustic Bragg reflectors, consisting of alternating silicon dioxide with tantalum pentoxide (Ta2O5/SiO2) or niobium pentoxide (Nb2O5/SiO2) on Si carrier wafers. Stack material parameters are extracted via high-resolution X-ray diffraction (HRXRD) and X-ray reflectivity (XRR). The simulation and experiment show confinement for longitudinal BAW from 14-20 GHz. ADLs show high propagation Q above 478 and 171 for Ta2O5/SiO2 and Nb2O5/SiO2, respectively. SMRs in both stacks perform similarly, showing coupling coefficient (k2) of 2.0%, series Q (Qs) of 156, and parallel Q (Qp) values of 140 for Ta2O5/SiO2, while k2 of 2.4%, Qs of 140, and Qp of 109 for Nb2O5/SiO2, both at 18.6 GHz. Upon development, ScAlN solidly mounted platforms will enable signal processing elements with better power handling.
期刊介绍:
IEEE Transactions on Ultrasonics, Ferroelectrics and Frequency Control includes the theory, technology, materials, and applications relating to: (1) the generation, transmission, and detection of ultrasonic waves and related phenomena; (2) medical ultrasound, including hyperthermia, bioeffects, tissue characterization and imaging; (3) ferroelectric, piezoelectric, and piezomagnetic materials, including crystals, polycrystalline solids, films, polymers, and composites; (4) frequency control, timing and time distribution, including crystal oscillators and other means of classical frequency control, and atomic, molecular and laser frequency control standards. Areas of interest range from fundamental studies to the design and/or applications of devices and systems.