{"title":"Influence of stibnite thickness on the degradation of methylene blue in aqueous solutions under visible light","authors":"Adel Chihi","doi":"10.1007/s10854-025-14501-y","DOIUrl":null,"url":null,"abstract":"<div><p>In this work, we have investigated the physical, and photocatalytic properties of Sb<sub>2</sub>S<sub>3</sub> thin films deposited on glass substrates by a dip-coating method as a function of their film thickness. The photocatalytic degradation of methylene blue (MB) dye under dark and visible light conditions for 60 min was used for the photocatalytic activity of Sb<sub>2</sub>S<sub>3</sub> thin films. The champion photodegradation rate of 98.5% for MB under visible light conditions was obtained with a film thickness of 1200 nm. The surface morphology of stibnite films was studied by field emission scanning electron microscope (FESEM), demonstrating that the grain size increased as the film thickness increased. X-ray diffraction (XRD) analysis revealed the formation of a polycrystalline orthorhombic structure with a clear preferred orientation along the (221) plane. The formation of a single phase of stibnite thin films was corroborated by measuring Raman spectra, unveiling five major Raman peaks. The estimated optical band gap value decreases from 1.72 to 1.67 eV as the film thickness rises from 300 to 1500 nm, indicating the possibility of band gap tuning by changing the Sb<sub>2</sub>S<sub>3</sub> film thickness. Electrochemical impedance spectroscopy (EIS) analysis has demonstrated the outstanding charge transfer properties of the stibnite thin films in the sample with a thickness of 1200 nm. These outcomes highlight the potential of film thickness for advanced photocatalytic applications.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 9","pages":""},"PeriodicalIF":2.8000,"publicationDate":"2025-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://link.springer.com/content/pdf/10.1007/s10854-025-14501-y.pdf","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Materials Science: Materials in Electronics","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s10854-025-14501-y","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
In this work, we have investigated the physical, and photocatalytic properties of Sb2S3 thin films deposited on glass substrates by a dip-coating method as a function of their film thickness. The photocatalytic degradation of methylene blue (MB) dye under dark and visible light conditions for 60 min was used for the photocatalytic activity of Sb2S3 thin films. The champion photodegradation rate of 98.5% for MB under visible light conditions was obtained with a film thickness of 1200 nm. The surface morphology of stibnite films was studied by field emission scanning electron microscope (FESEM), demonstrating that the grain size increased as the film thickness increased. X-ray diffraction (XRD) analysis revealed the formation of a polycrystalline orthorhombic structure with a clear preferred orientation along the (221) plane. The formation of a single phase of stibnite thin films was corroborated by measuring Raman spectra, unveiling five major Raman peaks. The estimated optical band gap value decreases from 1.72 to 1.67 eV as the film thickness rises from 300 to 1500 nm, indicating the possibility of band gap tuning by changing the Sb2S3 film thickness. Electrochemical impedance spectroscopy (EIS) analysis has demonstrated the outstanding charge transfer properties of the stibnite thin films in the sample with a thickness of 1200 nm. These outcomes highlight the potential of film thickness for advanced photocatalytic applications.
期刊介绍:
The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.