Influence of Cr doping on the structural, optical, and photovoltaic properties of MAPbI2Br thin films

IF 3.3 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Optical and Quantum Electronics Pub Date : 2025-03-26 DOI:10.1007/s11082-025-08087-2

Badriah S. Almutairi, Saddam Hussain, Muhammad Iftikhar Khan, Mongi Amami, Xueqing Xu, B. A. García-Grajeda, J. M. Mendivil-Escalante

{"title":"Influence of Cr doping on the structural, optical, and photovoltaic properties of MAPbI2Br thin films","authors":"Badriah S. Almutairi, Saddam Hussain, Muhammad Iftikhar Khan, Mongi Amami, Xueqing Xu, B. A. García-Grajeda, J. M. Mendivil-Escalante","doi":"10.1007/s11082-025-08087-2","DOIUrl":null,"url":null,"abstract":"<div>Organic/inorganic halide perovskites (OIHP), including the composition of methylammonium lead iodide bromide (MAPbI2Br), have gained increasing popularity in solar applications because to their exceptional optoelectronic characteristics. Despite the persistence of recombination losses and stability issues, MAPbI2Br remains a viable choice due to its bandgap of around 1.8 eV. The objective of this study is to examine the process of introducing 6% chromium (Cr) into MAPbI2Br in order to address the aforementioned challenges. X-ray diffraction (XRD), current-voltage (J-V), and ultraviolet-visible spectroscopy (UV-vis) studies have demonstrated improved structural, optical, and photovoltaic characteristics of perovskite films doped with 6% Cr. The observed decrease in bandgap (from 1.99 to 1.94 eV) as the crystal size grows (from 21.45 to 32.09 nm) may be attributed to quantum size effects. The band structures of electronic materials undergo changes as the crystal size increases and the confinement of electrons decreases, leading to alterations in the bandgap energy. The Cr–MAPbI2Br device achieves an efficiency of 8.36%, surpassing the 7.40% efficiency of pure MAPbI2Br. This is a significant advancement towards enhancing the safety and effectiveness of perovskite solar cells.</div>","PeriodicalId":720,"journal":{"name":"Optical and Quantum Electronics","volume":"57 4","pages":""},"PeriodicalIF":3.3000,"publicationDate":"2025-03-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://link.springer.com/content/pdf/10.1007/s11082-025-08087-2.pdf","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Optical and Quantum Electronics","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s11082-025-08087-2","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}

引用次数: 0

Abstract

Organic/inorganic halide perovskites (OIHP), including the composition of methylammonium lead iodide bromide (MAPbI₂Br), have gained increasing popularity in solar applications because to their exceptional optoelectronic characteristics. Despite the persistence of recombination losses and stability issues, MAPbI₂Br remains a viable choice due to its bandgap of around 1.8 eV. The objective of this study is to examine the process of introducing 6% chromium (Cr) into MAPbI₂Br in order to address the aforementioned challenges. X-ray diffraction (XRD), current-voltage (J-V), and ultraviolet-visible spectroscopy (UV-vis) studies have demonstrated improved structural, optical, and photovoltaic characteristics of perovskite films doped with 6% Cr. The observed decrease in bandgap (from 1.99 to 1.94 eV) as the crystal size grows (from 21.45 to 32.09 nm) may be attributed to quantum size effects. The band structures of electronic materials undergo changes as the crystal size increases and the confinement of electrons decreases, leading to alterations in the bandgap energy. The Cr–MAPbI₂Br device achieves an efficiency of 8.36%, surpassing the 7.40% efficiency of pure MAPbI₂Br. This is a significant advancement towards enhancing the safety and effectiveness of perovskite solar cells.

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来源期刊

Optical and Quantum Electronics 工程技术-工程：电子与电气

CiteScore

4.60

自引率

20.00%

发文量

810

审稿时长

3.8 months

期刊介绍： Optical and Quantum Electronics provides an international forum for the publication of original research papers, tutorial reviews and letters in such fields as optical physics, optical engineering and optoelectronics. Special issues are published on topics of current interest. Optical and Quantum Electronics is published monthly. It is concerned with the technology and physics of optical systems, components and devices, i.e., with topics such as: optical fibres; semiconductor lasers and LEDs; light detection and imaging devices; nanophotonics; photonic integration and optoelectronic integrated circuits; silicon photonics; displays; optical communications from devices to systems; materials for photonics (e.g. semiconductors, glasses, graphene); the physics and simulation of optical devices and systems; nanotechnologies in photonics (including engineered nano-structures such as photonic crystals, sub-wavelength photonic structures, metamaterials, and plasmonics); advanced quantum and optoelectronic applications (e.g. quantum computing, memory and communications, quantum sensing and quantum dots); photonic sensors and bio-sensors; Terahertz phenomena; non-linear optics and ultrafast phenomena; green photonics.