Spin Valve Sensor With Integrated On-Chip Longitudinal Permanent Magnet Biasing for Linear Sensing Applications

IF 2.1 3区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Transactions on Magnetics Pub Date : 2025-02-24 DOI:10.1109/TMAG.2025.3544762

Tejaswini C. Gawade;C. T. Gopika;Umesh P. Borole;K. P. Prajisha;Apoorva Kaul;Jakeer Khan;P. Chowdhury;Bhagaban Behera

{"title":"Spin Valve Sensor With Integrated On-Chip Longitudinal Permanent Magnet Biasing for Linear Sensing Applications","authors":"Tejaswini C. Gawade;C. T. Gopika;Umesh P. Borole;K. P. Prajisha;Apoorva Kaul;Jakeer Khan;P. Chowdhury;Bhagaban Behera","doi":"10.1109/TMAG.2025.3544762","DOIUrl":null,"url":null,"abstract":"This study focuses on fabricating spin-valve giant magnetoresistance (SV-GMR) sensors integrated with longitudinal permanent magnet (PM) biasing, resulting in a linearized field response with reduced hysteresis. For this, CoCrPt thick films were sputter-deposited under optimized conditions to achieve the highest <inline-formula> <tex-math>$H_{c}$ </tex-math></inline-formula> value of the order of 1600 Oe with a higher squareness ratio. Detailed finite element modeling (FEM) confirmed that the biasing field less than 40 Oe can be produced by PM with a thickness of <inline-formula> <tex-math>$1~\\mu $ </tex-math></inline-formula> m across the sensing elements with a gap of <inline-formula> <tex-math>$90~\\mu $ </tex-math></inline-formula> m. The SV-GMR sensors are patterned into resistors of on-chip push-pull Wheatstone bridge assembly and biased with PM to reduce coercivity with improved linearity. Furthermore, the device’s performance was evaluated across a broader temperature spectrum, revealing notable thermal stability within −40 °C to 125 °C. These findings highlight the sensor’s reliability and precision linear field sensing applications, specifically for low current measurements.","PeriodicalId":13405,"journal":{"name":"IEEE Transactions on Magnetics","volume":"61 4","pages":"1-6"},"PeriodicalIF":2.1000,"publicationDate":"2025-02-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Transactions on Magnetics","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10900606/","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}

引用次数: 0

Abstract

This study focuses on fabricating spin-valve giant magnetoresistance (SV-GMR) sensors integrated with longitudinal permanent magnet (PM) biasing, resulting in a linearized field response with reduced hysteresis. For this, CoCrPt thick films were sputter-deposited under optimized conditions to achieve the highest

$H_{c}$

value of the order of 1600 Oe with a higher squareness ratio. Detailed finite element modeling (FEM) confirmed that the biasing field less than 40 Oe can be produced by PM with a thickness of

$1~\mu $

m across the sensing elements with a gap of

$90~\mu $

m. The SV-GMR sensors are patterned into resistors of on-chip push-pull Wheatstone bridge assembly and biased with PM to reduce coercivity with improved linearity. Furthermore, the device’s performance was evaluated across a broader temperature spectrum, revealing notable thermal stability within −40 °C to 125 °C. These findings highlight the sensor’s reliability and precision linear field sensing applications, specifically for low current measurements.

查看原文本刊更多论文

自旋阀传感器集成片上纵向永磁偏置线性传感应用

本研究的重点是制造与纵向永磁（PM）偏置集成的自旋阀巨磁电阻（SV-GMR）传感器，从而实现线性化的场响应，减少磁滞。为此，在优化条件下溅射沉积CoCrPt厚膜，获得了最高的1600 Oe的$H_{c}$值和较高的方度比。详细的有限元建模（FEM）证实，通过厚度为$1~ $ $ μ $ m的PM可以在传感元件上产生小于40 Oe的偏置场，其间隙为$90~ $ μ $ m。SV-GMR传感器被模压成片上推挽惠斯顿电桥组件的电阻，并使用PM偏置以降低矫顽力，提高线性度。此外，该器件的性能在更广泛的温度范围内进行了评估，在- 40°C至125°C范围内显示出显著的热稳定性。这些发现突出了传感器的可靠性和精度线性场传感应用，特别是低电流测量。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

IEEE Transactions on Magnetics 工程技术-工程：电子与电气

CiteScore

4.00

自引率

14.30%

发文量

565

审稿时长

4.1 months

期刊介绍： Science and technology related to the basic physics and engineering of magnetism, magnetic materials, applied magnetics, magnetic devices, and magnetic data storage. The IEEE Transactions on Magnetics publishes scholarly articles of archival value as well as tutorial expositions and critical reviews of classical subjects and topics of current interest.