Impact of the collector structure on the performance of the insulated gate bipolar transistor

IF 1.9 3区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Microelectronics Journal Pub Date : 2025-03-25 DOI:10.1016/j.mejo.2025.106651

Jeroen van Zoeren , Gaurav Gupta , Boni Boksteen , Lis K. Nanver , Raymond J.E. Hueting

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引用次数: 0

Abstract

Various types of collectors have been reported for insulated-gate bipolar transistors (IGBTs). Despite their importance however, a thorough study on the influence of the collector structure on the performance of the IGBT is lacking in literature. In this work, the impact of the collector structure on mainly the DC performance of the IGBT has been studied through extensive TCAD simulations. This is done via the Gummel number of the collector, which is used for three types of collector structures (i.e. silicon, silicon-germanium, and pure boron). These structures are interesting because they can extend the Gummel numbers to respectively smaller and higher values, and potentially also reduce the process complexity. Finally, an analytical expression between the saturation voltage and stored charge, i.e. the trade-off curve, has been derived, where the stored charge is a good measure for the switching losses. Therefore, this analytical expression can be employed to estimate the switching losses directly from device properties.

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来源期刊

Microelectronics Journal 工程技术-工程：电子与电气

CiteScore

4.00

自引率

27.30%

发文量

222

审稿时长

43 days

期刊介绍： Published since 1969, the Microelectronics Journal is an international forum for the dissemination of research and applications of microelectronic systems, circuits, and emerging technologies. Papers published in the Microelectronics Journal have undergone peer review to ensure originality, relevance, and timeliness. The journal thus provides a worldwide, regular, and comprehensive update on microelectronic circuits and systems. The Microelectronics Journal invites papers describing significant research and applications in all of the areas listed below. Comprehensive review/survey papers covering recent developments will also be considered. The Microelectronics Journal covers circuits and systems. This topic includes but is not limited to: Analog, digital, mixed, and RF circuits and related design methodologies; Logic, architectural, and system level synthesis; Testing, design for testability, built-in self-test; Area, power, and thermal analysis and design; Mixed-domain simulation and design; Embedded systems; Non-von Neumann computing and related technologies and circuits; Design and test of high complexity systems integration; SoC, NoC, SIP, and NIP design and test; 3-D integration design and analysis; Emerging device technologies and circuits, such as FinFETs, SETs, spintronics, SFQ, MTJ, etc. Application aspects such as signal and image processing including circuits for cryptography, sensors, and actuators including sensor networks, reliability and quality issues, and economic models are also welcome.