CNTFET Based Design of Optimized High Frequency VCII and Its Application as Mixed Mode Universal Filter Suitable for VHF Band

IF 1.6 4区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC
Smita Khole, Mousumi Bhanja, Mohammad Faseehuddin, Sadia Shireen, Worapong Tangsrirat
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引用次数: 0

Abstract

In this research, Carbon Nanotube Field-effect Transistors (CNTFETs) are employed in the design of a second-generation Voltage Conveyor (VCII), an analog block. The aim of this research is to study CNTFETs as an alternative to CMOS for designing high-frequency and low-voltage circuits. The complete design procedure for VCII and its two variants, namely, modified VCII (M-VCII) and VCII minus (VCII−) is presented. This work incorporates variations in the design variables of CNTFETs, including pitch, the number of tubes, and the diameter of carbon nanotubes (CNT). The study explores the impact of these variations on the critical performance parameters of the CNTFETs. The optimal values of the design variables for each transistor are calculated through extensive simulation analysis using the Verilog-A semi-empirical Stanford Virtual-Source Carbon Nanotube Field-Effect Transistor model. The CNTFET-based VCII and its variants are optimized and validated at the supply voltage of ±0.9 V. The CNTFET-based VCII exhibits improved voltage and current bandwidths of 1.4 and 1 THz, respectively. The input/output impedance and power dissipation also validate improvement compared to CMOS implementation. To verify the performance of the proposed VCII and its variants, they are used in the design of a mixed-mode universal filter (MMUF). The proposed filter is designed for a cut-off frequency of 79 MHz and consumes 7.368 mW of power. The effects of parameter variations and noise on the VCII design are also discussed.

基于CNTFET的高频VCII优化设计及其在甚高频混合模通用滤波器中的应用
在这项研究中,碳纳米管场效应晶体管(cntfet)被用于设计第二代电压传送带(VCII),一个模拟模块。本研究的目的是研究cntfet作为CMOS的替代品来设计高频和低压电路。给出了VCII及其改进型VCII (M-VCII)和VCII minus (VCII -)的完整设计过程。这项工作结合了cntfet的设计变量的变化,包括间距,管的数量和碳纳米管(CNT)的直径。本研究探讨了这些变化对cntfet关键性能参数的影响。通过使用Verilog-A半经验斯坦福虚拟源碳纳米管场效应晶体管模型进行广泛的仿真分析,计算出每个晶体管的设计变量的最佳值。基于cntfet的VCII及其变体在±0.9 V电源电压下进行了优化和验证。基于cntfet的VCII分别具有1.4 THz和1 THz的电压和电流带宽。输入/输出阻抗和功耗也验证了与CMOS实现相比的改进。为了验证所提出的VCII及其变体的性能,将它们用于设计混合模式通用滤波器(MMUF)。该滤波器的截止频率为79 MHz,功耗为7.368 mW。讨论了参数变化和噪声对VCII设计的影响。
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来源期刊
CiteScore
4.60
自引率
6.20%
发文量
101
审稿时长
>12 weeks
期刊介绍: Prediction through modelling forms the basis of engineering design. The computational power at the fingertips of the professional engineer is increasing enormously and techniques for computer simulation are changing rapidly. Engineers need models which relate to their design area and which are adaptable to new design concepts. They also need efficient and friendly ways of presenting, viewing and transmitting the data associated with their models. The International Journal of Numerical Modelling: Electronic Networks, Devices and Fields provides a communication vehicle for numerical modelling methods and data preparation methods associated with electrical and electronic circuits and fields. It concentrates on numerical modelling rather than abstract numerical mathematics. Contributions on numerical modelling will cover the entire subject of electrical and electronic engineering. They will range from electrical distribution networks to integrated circuits on VLSI design, and from static electric and magnetic fields through microwaves to optical design. They will also include the use of electrical networks as a modelling medium.
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