Features of the Conductivity of Nominally Undoped Single-Crystal CVD Diamond

IF 1.4 4区物理与天体物理 Q3 PHYSICS, MULTIDISCIPLINARY

JETP Letters Pub Date : 2025-03-25 DOI:10.1134/S0021364024605293

M. S. Kagan, S. K. Paprotskiy, N. A. Khvalkovskiy, I. V. Altukhov, N. B. Rodionov, A. P. Bol’shakov, V. G. Ral’chenko, R. A. Khmel’nitskiy

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Abstract

The conductivity of nominally undoped single-crystal diamond films grown epitaxially by chemical vapor deposition on a heavily boron-doped p⁺-type diamond substrate has been studied. The conductivity of the films has been determined by the boron acceptor impurity. The temperature dependence of the conductivity in the temperature range of 300–500 K obeys the activation law, but the activation energy significantly exceeds the ionization energy of boron acceptors of ε_i = 0.37 eV. It has been found that the acceptors are strongly compensated. This leads to the appearance of a random potential with a large amplitude of γ ≈ 0.2 eV, leading to a large increase in the activation energy ∼ε_i + γ. The reason for the appearance of the strong random potential has been attributed to the self-compensation of boron impurities by nitrogen atoms during the chemical vapor deposition growth of diamond films on the heavily doped substrate.

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名义上未掺杂的单晶 CVD 金刚石的电导率特征

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来源期刊

JETP Letters 物理-物理：综合

CiteScore

2.40

自引率

30.80%

发文量

164

审稿时长

3-6 weeks

期刊介绍： All topics of experimental and theoretical physics including gravitation, field theory, elementary particles and nuclei, plasma, nonlinear phenomena, condensed matter, superconductivity, superfluidity, lasers, and surfaces.