Features of the Conductivity of Nominally Undoped Single-Crystal CVD Diamond

IF 1.4 4区物理与天体物理 Q3 PHYSICS, MULTIDISCIPLINARY

JETP Letters Pub Date : 2025-03-25 DOI:10.1134/S0021364024605293

M. S. Kagan, S. K. Paprotskiy, N. A. Khvalkovskiy, I. V. Altukhov, N. B. Rodionov, A. P. Bol’shakov, V. G. Ral’chenko, R. A. Khmel’nitskiy

{"title":"Features of the Conductivity of Nominally Undoped Single-Crystal CVD Diamond","authors":"M. S. Kagan, S. K. Paprotskiy, N. A. Khvalkovskiy, I. V. Altukhov, N. B. Rodionov, A. P. Bol’shakov, V. G. Ral’chenko, R. A. Khmel’nitskiy","doi":"10.1134/S0021364024605293","DOIUrl":null,"url":null,"abstract":"The conductivity of nominally undoped single-crystal diamond films grown epitaxially by chemical vapor deposition on a heavily boron-doped p+-type diamond substrate has been studied. The conductivity of the films has been determined by the boron acceptor impurity. The temperature dependence of the conductivity in the temperature range of 300–500 K obeys the activation law, but the activation energy significantly exceeds the ionization energy of boron acceptors of εi = 0.37 eV. It has been found that the acceptors are strongly compensated. This leads to the appearance of a random potential with a large amplitude of γ ≈ 0.2 eV, leading to a large increase in the activation energy ∼εi + γ. The reason for the appearance of the strong random potential has been attributed to the self-compensation of boron impurities by nitrogen atoms during the chemical vapor deposition growth of diamond films on the heavily doped substrate.","PeriodicalId":604,"journal":{"name":"JETP Letters","volume":"121 3","pages":"220 - 224"},"PeriodicalIF":1.4000,"publicationDate":"2025-03-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"JETP Letters","FirstCategoryId":"101","ListUrlMain":"https://link.springer.com/article/10.1134/S0021364024605293","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"PHYSICS, MULTIDISCIPLINARY","Score":null,"Total":0}

引用次数: 0

Abstract

The conductivity of nominally undoped single-crystal diamond films grown epitaxially by chemical vapor deposition on a heavily boron-doped p⁺-type diamond substrate has been studied. The conductivity of the films has been determined by the boron acceptor impurity. The temperature dependence of the conductivity in the temperature range of 300–500 K obeys the activation law, but the activation energy significantly exceeds the ionization energy of boron acceptors of ε_i = 0.37 eV. It has been found that the acceptors are strongly compensated. This leads to the appearance of a random potential with a large amplitude of γ ≈ 0.2 eV, leading to a large increase in the activation energy ∼ε_i + γ. The reason for the appearance of the strong random potential has been attributed to the self-compensation of boron impurities by nitrogen atoms during the chemical vapor deposition growth of diamond films on the heavily doped substrate.

Abstract Image

查看原文本刊更多论文

名义上未掺杂的单晶 CVD 金刚石的电导率特征

研究了化学气相沉积法在重硼掺杂p+型金刚石衬底上外延生长名义上未掺杂的单晶金刚石薄膜的电导率。薄膜的导电性由硼受体杂质决定。在300 ~ 500 K温度范围内，电导率的温度依赖性服从活化规律，但活化能明显超过硼受体的电离能εi = 0.37 eV。已经发现受体是强补偿的。这导致出现一个大振幅γ≈0.2 eV的随机电位，导致活化能~ εi + γ大幅增加。强随机电位的出现是由于在重掺杂的衬底上化学气相沉积生长金刚石薄膜时，氮原子对硼杂质进行了自我补偿。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

JETP Letters 物理-物理：综合

CiteScore

2.40

自引率

30.80%

发文量

164

审稿时长

3-6 weeks

期刊介绍： All topics of experimental and theoretical physics including gravitation, field theory, elementary particles and nuclei, plasma, nonlinear phenomena, condensed matter, superconductivity, superfluidity, lasers, and surfaces.