{"title":"Zn-doped V2O5 cathode material for lithium-ion batteries operating in the voltage window of 1.5–4.0 V","authors":"Malika Berouaken, Chafiaa Yaddaden, Noureddine Gabouze, Saloua Merazga, Fatima Boudeffar, Abdelhak Cheriet, Lamia Talbi, Katia Chebout Ayouz, Maha Ayat, Amar Manseri","doi":"10.1007/s10854-025-14574-9","DOIUrl":null,"url":null,"abstract":"<div><p>In this work, Zn-doped vanadium pentoxide (V<sub>2</sub>O<sub>5</sub>) cathode materials for lithium-ion batteries (LIBs) were prepared via a facile wet chemical solution process followed by post-calcination treatment. The zinc doping impact on the phase structure, surface morphology, chemical states, and specific surface area of the as-prepared powders was studied using X-ray diffraction (XRD), emission scanning electron microscopy (SEM), X-ray photoelectron spectra (XPS), and Brunauer–Emmet–Teller (BET). The electrochemical behavior of undoped (VZ0%) and Zn-doped V<sub>2</sub>O<sub>5</sub> with 1 wt% (VZ1%) as cathodes for LIBs was investigated by cyclic voltammetry (CV), galvanostatic charge–discharge, and electrochemical impedance spectroscopy (EIS) measurements. As a result, the VZ1% sample possesses better properties than the VZ0% and suitable for use as cathode material in LIBs. The VZ1% sample displayed a higher specific discharge capacity (210 mAh g<sup>−1</sup> at 0.25 C), excellent cycle stability with a specific capacitance retention of 63% after 50 cycles of the charge/discharge process, and low charge transfer reaction resistance (<i>R</i><sub>ct</sub> = 107 Ω). The considerably improved electrochemical performance of Zn-doped V<sub>2</sub>O<sub>5</sub> can be attributed to its porous structure, lowest crystallite size, cell volume expansion, highest specific surface area, enhanced electronic conductivity and lowest charge transfer resistance.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 9","pages":""},"PeriodicalIF":2.8000,"publicationDate":"2025-03-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Materials Science: Materials in Electronics","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s10854-025-14574-9","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
In this work, Zn-doped vanadium pentoxide (V2O5) cathode materials for lithium-ion batteries (LIBs) were prepared via a facile wet chemical solution process followed by post-calcination treatment. The zinc doping impact on the phase structure, surface morphology, chemical states, and specific surface area of the as-prepared powders was studied using X-ray diffraction (XRD), emission scanning electron microscopy (SEM), X-ray photoelectron spectra (XPS), and Brunauer–Emmet–Teller (BET). The electrochemical behavior of undoped (VZ0%) and Zn-doped V2O5 with 1 wt% (VZ1%) as cathodes for LIBs was investigated by cyclic voltammetry (CV), galvanostatic charge–discharge, and electrochemical impedance spectroscopy (EIS) measurements. As a result, the VZ1% sample possesses better properties than the VZ0% and suitable for use as cathode material in LIBs. The VZ1% sample displayed a higher specific discharge capacity (210 mAh g−1 at 0.25 C), excellent cycle stability with a specific capacitance retention of 63% after 50 cycles of the charge/discharge process, and low charge transfer reaction resistance (Rct = 107 Ω). The considerably improved electrochemical performance of Zn-doped V2O5 can be attributed to its porous structure, lowest crystallite size, cell volume expansion, highest specific surface area, enhanced electronic conductivity and lowest charge transfer resistance.
期刊介绍:
The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.