Single-Photon Emission in the Telecom C-Band in a Micropillar Cavity with an InAs/InGaAs Quantum Dot

IF 1.4 4区物理与天体物理 Q3 PHYSICS, MULTIDISCIPLINARY

JETP Letters Pub Date : 2025-01-27 DOI:10.1134/S0021364024605116

A. I. Veretennikov, M. V. Rakhlin, Yu. M. Serov, A. I. Galimov, G. P. Veyshtort, S. V. Sorokin, G. V. Klimko, I. V. Sedova, N. A. Maleev, M. A. Bobrov, A. P. Vasiliev, A. G. Kuzmenkov, M. M. Kulagina, Yu. M. Zadiranov, S. I. Troshkov, Yu. A. Salii, D. S. Berezina, E. V. Nikitina, A. A. Toropov

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引用次数: 0

Abstract

We present the design and experimental demonstration of a micropillar metamorphic cavity structure with an embedded InAs/InGaAs quantum dot, intended for single-photon generation in the telecommunication C‑band. The microcavity, incorporating a single GaAs/AlGaAs distributed Bragg reflector, is designed to provide a photon extraction efficiency of 15% into a numerical aperture of 0.7. The structure, fabricated by molecular beam epitaxy, photolithography, and plasma-enhanced chemical etching, exhibited an average C‑band photon emission rate of \( \sim \)1 MHz at the first lens with a second-order correlation function of \({{g}^{{(2)}}}(0)\) = 0.14.

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带InAs/InGaAs量子点的微柱腔中电信c波段单光子发射

我们提出了一种嵌入InAs/InGaAs量子点的微柱变质腔结构的设计和实验演示，用于电信C波段的单光子产生。该微腔采用单个GaAs/AlGaAs分布式Bragg反射器，其光子提取效率为15％% into a numerical aperture of 0.7. The structure, fabricated by molecular beam epitaxy, photolithography, and plasma-enhanced chemical etching, exhibited an average C‑band photon emission rate of \( \sim \)1 MHz at the first lens with a second-order correlation function of \({{g}^{{(2)}}}(0)\) = 0.14.

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来源期刊

JETP Letters 物理-物理：综合

CiteScore

2.40

自引率

30.80%

发文量

164

审稿时长

3-6 weeks

期刊介绍： All topics of experimental and theoretical physics including gravitation, field theory, elementary particles and nuclei, plasma, nonlinear phenomena, condensed matter, superconductivity, superfluidity, lasers, and surfaces.