Dual-Site Passivation Coupling Internal Encapsulation via 3,5-Bis(trifluoromethyl)benzenethiol for Efficient and Stable Perovskite Solar Cells

IF 8.2 2区 材料科学 Q1 MATERIALS SCIENCE, MULTIDISCIPLINARY
Wanqi Zhang, Yan Li, Xiangfei Song, He Yang, Zihu Kang, Yue Zheng and Xia Tao*, 
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Abstract

Perovskite solar cells (PSCs) have made significant progress in efficiency, but their long-term operational stability remains an important yet challenging issue. Here, a dual-site passivation coupling internal encapsulation strategy is developed by introducing 3,5-bis(trifluoromethyl)-benzenethiol (35BBT) at the perovskite (PVK)/hole transport layer (HTL) interface. 35BBT provides dual active sites containing sulfur (S) atoms and fluorine (F) atoms, where the S atoms in the sulfhydryl group and the F atoms in the trifluoromethyl group coordinate with unpaired Pb2+ to form coordinate bonds, meanwhile the F atoms in the trifluoromethyl group form hydrogen bonds with organic cations. This dual-site passivation mitigates deep and shallow defects at the PVK/HTL interface. Notably, 35BBT, with hydrophobic trifluoromethyl and benzene rings covering the perovskite layer, enables internal encapsulation to protect the perovskite films from water and oxygen invasion. Consequently, the Ag-based device with 35BBT treatment achieves an efficiency enhancement from 22.03% to 23.86%, retaining 89.1% of its initial efficiency even after 2000 h of air exposure. This fabricated device also exhibits long-term thermal stability at 60 °C. This study offers an avenue for simultaneously passivating deep and shallow defects at the PVK/HTL interface and inhibiting water/oxygen erosion, thereby enabling the fabrication of efficient and stable PSCs for future commercial applications.

Abstract Image

高效稳定钙钛矿太阳能电池的3,5-双(三氟甲基)苯乙醇内封装
过氧化物太阳能电池(PSCs)在效率方面取得了重大进展,但其长期运行稳定性仍然是一个重要而又具有挑战性的问题。在这里,通过在过氧化物(PVK)/空穴传输层(HTL)界面引入 3,5-双(三氟甲基)-苯硫酚(35BBT),开发了一种双位点钝化耦合内部封装策略。35BBT 提供了含有硫(S)原子和氟(F)原子的双活性位点,其中巯基中的 S 原子和三氟甲基中的 F 原子与未配对的 Pb2+ 形成配位键,而三氟甲基中的 F 原子则与有机阳离子形成氢键。这种双位点钝化减轻了 PVK/HTL 界面的深层和浅层缺陷。值得注意的是,35BBT 具有疏水性三氟甲基和苯环,覆盖在包晶层上,实现了内部封装,保护包晶薄膜免受水和氧气的侵蚀。因此,经过 35BBT 处理的银基器件效率从 22.03% 提高到 23.86%,即使在空气中暴露 2000 小时后,仍能保持 89.1% 的初始效率。这种制备的器件还能在 60 °C 下长期保持热稳定性。这项研究为同时钝化 PVK/HTL 界面的深层和浅层缺陷以及抑制水/氧侵蚀提供了一条途径,从而使高效、稳定的 PSC 的制造成为可能,并可用于未来的商业应用。
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来源期刊
ACS Applied Materials & Interfaces
ACS Applied Materials & Interfaces 工程技术-材料科学:综合
CiteScore
16.00
自引率
6.30%
发文量
4978
审稿时长
1.8 months
期刊介绍: ACS Applied Materials & Interfaces is a leading interdisciplinary journal that brings together chemists, engineers, physicists, and biologists to explore the development and utilization of newly-discovered materials and interfacial processes for specific applications. Our journal has experienced remarkable growth since its establishment in 2009, both in terms of the number of articles published and the impact of the research showcased. We are proud to foster a truly global community, with the majority of published articles originating from outside the United States, reflecting the rapid growth of applied research worldwide.
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