Harnessing prefabrication techniques for accurate and efficient optoelectronic characterization of perovskite thin films

Abstract

This study presents a comprehensive approach for evaluating the structural and optoelectronic properties of perovskite layers through a combination of electrical and optical characterization techniques. We analyze antisolvent-treated samples alongside untreated samples to demonstrate the effectiveness of our methods in assessing the impact of processing techniques on the material's properties. Photoluminescence analyses reveal temperature-dependent recombination rates, charge transport dynamics, and the influence of applied electrical fields. I-V and I-t measurements, along with Mott-Schottky and space charge limited current analyses, enable the determination of conductivity, semiconductor type, and trap density. Our findings exhibit clear optoelectronic enhancements following structural modifications. Additionally, they highlight the importance of utilizing these combined characterization methods to understand the interplay between structural enhancements and optoelectronic properties. This understanding paves the way for developing and optimizing efficient, stable perovskite-based photovoltaic and optoelectronic devices.