Improved vacuum-evaporated blue perovskite light-emitting diodes with phenethylammonium chloride and guanidinium bromide synergistic post-processing modification.

IF 4.1 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Liang Sun, Xiping He, Zhiyuan He, Feihu Zhang, Chencheng Peng, Ben Chen, Runda Guo, Lei Wang
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引用次数: 0

Abstract

Metal halide perovskites have become one of the most competitive new-generation optoelectronic materials due to their excellent optoelectronic properties. Vacuum evaporation can produce high-purity and large-area films, leading to the wide application of this method in the semiconductor industry and optoelectronics field. However, the electroluminescent performance of vacuum-evaporated perovskite light-emitting diodes (PeLEDs) still lags behind those counterparts fabricated by solution methods. Herein, based on vacuum evaporation, 3D perovskite films are obtained by three-source co-evaporation. Considering the unique quantum well structure of quasi-2D perovskite can significantly enhance the exciton binding energy and improve the radiative recombination rate, leading to a high photoluminescence quantum yield (PLQY). Subsequently, the highly stable and low-defect-density quasi-2D perovskite is introduced into 3D perovskite films through post-treatment with phenethylammonium chloride (PEACl). To minimize the degradation of film quality caused by PEACl treatment, a layer of guanidinium bromide (GABr) is vacuum evaporated on top of PEACl treatment to further improve the quality of emitting layer. Finally, under the synergistic post-processing modification of PEACl and GABr, blue PeLEDs with a maximum external quantum efficiency (EQE) of 6.09% and a maximum brightness of 1325 cd/m2 are successfully obtained. This work deepens the understanding of 2D/3D heterojunctions and provides a new approach to construct PeLEDs with high performance.

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来源期刊
Frontiers of Optoelectronics
Frontiers of Optoelectronics ENGINEERING, ELECTRICAL & ELECTRONIC-
CiteScore
7.80
自引率
0.00%
发文量
583
期刊介绍: Frontiers of Optoelectronics seeks to provide a multidisciplinary forum for a broad mix of peer-reviewed academic papers in order to promote rapid communication and exchange between researchers in China and abroad. It introduces and reflects significant achievements being made in the field of photonics or optoelectronics. The topics include, but are not limited to, semiconductor optoelectronics, nano-photonics, information photonics, energy photonics, ultrafast photonics, biomedical photonics, nonlinear photonics, fiber optics, laser and terahertz technology and intelligent photonics. The journal publishes reviews, research articles, letters, comments, special issues and so on. Frontiers of Optoelectronics especially encourages papers from new emerging and multidisciplinary areas, papers reflecting the international trends of research and development, and on special topics reporting progress made in the field of optoelectronics. All published papers will reflect the original thoughts of researchers and practitioners on basic theories, design and new technology in optoelectronics. Frontiers of Optoelectronics is strictly peer-reviewed and only accepts original submissions in English. It is a fully OA journal and the APCs are covered by Higher Education Press and Huazhong University of Science and Technology. ● Presents the latest developments in optoelectronics and optics ● Emphasizes the latest developments of new optoelectronic materials, devices, systems and applications ● Covers industrial photonics, information photonics, biomedical photonics, energy photonics, laser and terahertz technology, and more
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