Quasi-Vertical Diamond Schottky Barrier Diode With Sidewall-Enhanced n-Ga2O3/p-Diamond Junction Termination Extension

IF 1.6 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

International Journal of Numerical Modelling-Electronic Networks Devices and Fields Pub Date : 2025-03-23 DOI:10.1002/jnm.70038

Chengwei Dong, Wang Lin, Tong Zhang, Xianyi Lv, Qiliang Wang, Liuan Li, Guangtian Zou

{"title":"Quasi-Vertical Diamond Schottky Barrier Diode With Sidewall-Enhanced n-Ga2O3/p-Diamond Junction Termination Extension","authors":"Chengwei Dong, Wang Lin, Tong Zhang, Xianyi Lv, Qiliang Wang, Liuan Li, Guangtian Zou","doi":"10.1002/jnm.70038","DOIUrl":null,"url":null,"abstract":"<div>\n \n <p>In the present study, a quasi-vertical diamond Schottky barrier diode (SBD) with a junction termination extension (JTE) structure is designed and simulated using Silvaco software. We firstly investigate the influences of spatial location and thickness of the n-Ga<sub>2</sub>O<sub>3</sub>/p-diamond PN junction on the electrical performances. Subsequently, the doping concentration and width of the JTE region are optimized to achieve the highest Baliga Figure of Merit (BFOM) value, with the underlying mechanisms governing the electrical characteristics systematically analyzed. Furthermore, we also propose a sidewall-enhanced JTE structure to improve the breakdown voltage without influencing the on-resistance and turn-on voltage. In addition, it is found that the etching depth of the mesa presents minimal influence on the diamond SBD. These findings are beneficial to realizing a high-performance quasi-vertical diamond SBD.</p>\n </div>","PeriodicalId":50300,"journal":{"name":"International Journal of Numerical Modelling-Electronic Networks Devices and Fields","volume":"38 2","pages":""},"PeriodicalIF":1.6000,"publicationDate":"2025-03-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Journal of Numerical Modelling-Electronic Networks Devices and Fields","FirstCategoryId":"5","ListUrlMain":"https://onlinelibrary.wiley.com/doi/10.1002/jnm.70038","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}

引用次数: 0

Abstract

In the present study, a quasi-vertical diamond Schottky barrier diode (SBD) with a junction termination extension (JTE) structure is designed and simulated using Silvaco software. We firstly investigate the influences of spatial location and thickness of the n-Ga₂O₃/p-diamond PN junction on the electrical performances. Subsequently, the doping concentration and width of the JTE region are optimized to achieve the highest Baliga Figure of Merit (BFOM) value, with the underlying mechanisms governing the electrical characteristics systematically analyzed. Furthermore, we also propose a sidewall-enhanced JTE structure to improve the breakdown voltage without influencing the on-resistance and turn-on voltage. In addition, it is found that the etching depth of the mesa presents minimal influence on the diamond SBD. These findings are beneficial to realizing a high-performance quasi-vertical diamond SBD.

查看原文本刊更多论文

具有边壁增强n-Ga2O3/p-金刚石结终端扩展的准垂直金刚石肖特基势垒二极管

本文设计了一种具有结端延伸（JTE）结构的准垂直菱形肖特基势垒二极管（SBD），并利用Silvaco软件进行了仿真。我们首先研究了n-Ga2O3/p-金刚石PN结的空间位置和厚度对电性能的影响。随后，对掺杂浓度和JTE区域宽度进行了优化，以获得最高的Baliga优值（bbfom），并系统分析了控制电特性的潜在机制。此外，我们还提出了一种侧壁增强的JTE结构，在不影响导通电阻和导通电压的情况下提高击穿电压。此外，还发现台面的蚀刻深度对金刚石SBD的影响最小。这些研究结果有助于实现高性能的准垂直金刚石SBD。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

International Journal of Numerical Modelling-Electronic Networks Devices and Fields 工程技术-工程：电子与电气

CiteScore

4.60

自引率

6.20%

发文量

101

审稿时长

>12 weeks

期刊介绍： Prediction through modelling forms the basis of engineering design. The computational power at the fingertips of the professional engineer is increasing enormously and techniques for computer simulation are changing rapidly. Engineers need models which relate to their design area and which are adaptable to new design concepts. They also need efficient and friendly ways of presenting, viewing and transmitting the data associated with their models. The International Journal of Numerical Modelling: Electronic Networks, Devices and Fields provides a communication vehicle for numerical modelling methods and data preparation methods associated with electrical and electronic circuits and fields. It concentrates on numerical modelling rather than abstract numerical mathematics. Contributions on numerical modelling will cover the entire subject of electrical and electronic engineering. They will range from electrical distribution networks to integrated circuits on VLSI design, and from static electric and magnetic fields through microwaves to optical design. They will also include the use of electrical networks as a modelling medium.