Machine Learning Based Modeling of Electrical Characteristics in Triangular Gate FinFETs for Low Power Electronics

IF 1.6 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

International Journal of Numerical Modelling-Electronic Networks Devices and Fields Pub Date : 2025-03-20 DOI:10.1002/jnm.70036

M. Hemalatha, N. B. Balamurugan, M. Suguna, N. Ayyanar

{"title":"Machine Learning Based Modeling of Electrical Characteristics in Triangular Gate FinFETs for Low Power Electronics","authors":"M. Hemalatha, N. B. Balamurugan, M. Suguna, N. Ayyanar","doi":"10.1002/jnm.70036","DOIUrl":null,"url":null,"abstract":"<div>\n \n <p>Modeling and optimization of devices play a critical role in the management of product quality and the advancement of technology within the industrial sector. With the advent of novel devices and the progression of technology, these devices exhibit a multitude of interrelated factors and demonstrate a nonlinear correlation. Triangular Gate (TG) FinFETs technology has emerged as a possible alternative for addressing the limitations of traditional planar transistors in present integrated circuits (ICs). This paper presents an effective data-driven Multiobjective Optimization (MOO) with evolutionary computation (EC) techniques. By using these techniques, TG FinFETs enables the automated identification of optimal design that balances the transistor speed, power, and variability. To assist in the design of TG FinFETs, this study integrated two popular MOO techniques such as PAL and NSGA-III. These algorithms effectively handle the complicated trade-offs between diverse objectives and allow for efficient and effective TG FinFETs design optimization.</p>\n </div>","PeriodicalId":50300,"journal":{"name":"International Journal of Numerical Modelling-Electronic Networks Devices and Fields","volume":"38 2","pages":""},"PeriodicalIF":1.6000,"publicationDate":"2025-03-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Journal of Numerical Modelling-Electronic Networks Devices and Fields","FirstCategoryId":"5","ListUrlMain":"https://onlinelibrary.wiley.com/doi/10.1002/jnm.70036","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}

引用次数: 0

Abstract

Modeling and optimization of devices play a critical role in the management of product quality and the advancement of technology within the industrial sector. With the advent of novel devices and the progression of technology, these devices exhibit a multitude of interrelated factors and demonstrate a nonlinear correlation. Triangular Gate (TG) FinFETs technology has emerged as a possible alternative for addressing the limitations of traditional planar transistors in present integrated circuits (ICs). This paper presents an effective data-driven Multiobjective Optimization (MOO) with evolutionary computation (EC) techniques. By using these techniques, TG FinFETs enables the automated identification of optimal design that balances the transistor speed, power, and variability. To assist in the design of TG FinFETs, this study integrated two popular MOO techniques such as PAL and NSGA-III. These algorithms effectively handle the complicated trade-offs between diverse objectives and allow for efficient and effective TG FinFETs design optimization.

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来源期刊

International Journal of Numerical Modelling-Electronic Networks Devices and Fields 工程技术-工程：电子与电气

CiteScore

4.60

自引率

6.20%

发文量

101

审稿时长

>12 weeks

期刊介绍： Prediction through modelling forms the basis of engineering design. The computational power at the fingertips of the professional engineer is increasing enormously and techniques for computer simulation are changing rapidly. Engineers need models which relate to their design area and which are adaptable to new design concepts. They also need efficient and friendly ways of presenting, viewing and transmitting the data associated with their models. The International Journal of Numerical Modelling: Electronic Networks, Devices and Fields provides a communication vehicle for numerical modelling methods and data preparation methods associated with electrical and electronic circuits and fields. It concentrates on numerical modelling rather than abstract numerical mathematics. Contributions on numerical modelling will cover the entire subject of electrical and electronic engineering. They will range from electrical distribution networks to integrated circuits on VLSI design, and from static electric and magnetic fields through microwaves to optical design. They will also include the use of electrical networks as a modelling medium.