Structural, optical and electrical properties of Al-doped TiO2 and NiO thin films synthesized via chemical bath deposition

Abstract

The pure and aluminium (Al) doped titanium oxide (TiO₂) and nickel oxide (NiO) thin films were prepared by chemical bath deposition. The films were prepared for different aluminium concentrations, i.e., 2%, 4%, 6% and 8%, respectively. The XRD patterns of the Al-doped TiO₂ and NiO films showed hexagonal and cubic phases with polycrystalline. The crystallite size of the films was varied with Al doping. The absorbance of the films was improved with aluminium doping for TiO2 and NiO films. The bandgap of the films ranged m 3.1 to 2.8 eV for TiO₂ and 3.7 eV to 3.3 eV for NiO with aluminium doping. In both films, the electrical resistivity and carrier concentration varied with the aluminium doping concentration.