S. V. Balakirev, N. E. Chernenko, E. A. Lakhina, D. V. Kirichenko, N. A. Shandyba, D. D. Dukhan, M. M. Eremenko, M. S. Solodovnik
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Abstract
This paper presents for the first time the results of studying the influence of annealing modes of GaAs(111) substrates modified by focused ion beams on the transformation of the geometric characteristics of formed nanoholes due to the processes of local droplet etching. Experimental regularities of the influence of the number of ion beam passes, as well as the modes of substrate annealing (in an arsenic flux or its absence) on the shape, depth, and lateral size of nanoholes are established. The mechanism of transformation of the geometric characteristics of nanoholes formed at the points of influence of a focused ion beam during annealing under different modes leading to local droplet etching of the substrate at varying intensities is proposed.
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Nanobiotechnology Reports publishes interdisciplinary research articles on fundamental aspects of the structure and properties of nanoscale objects and nanomaterials, polymeric and bioorganic molecules, and supramolecular and biohybrid complexes, as well as articles that discuss technologies for their preparation and processing, and practical implementation of products, devices, and nature-like systems based on them. The journal publishes original articles and reviews that meet the highest scientific quality standards in the following areas of science and technology studies: self-organizing structures and nanoassemblies; nanostructures, including nanotubes; functional and structural nanomaterials; polymeric, bioorganic, and hybrid nanomaterials; devices and products based on nanomaterials and nanotechnology; nanobiology and genetics, and omics technologies; nanobiomedicine and nanopharmaceutics; nanoelectronics and neuromorphic computing systems; neurocognitive systems and technologies; nanophotonics; natural science methods in a study of cultural heritage items; metrology, standardization, and monitoring in nanotechnology.
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