Effect of Resistive State Switching in Led Structures Based on InGaN/GaN

IF 0.8 Q3 Engineering

Nanotechnologies in Russia Pub Date : 2025-03-24 DOI:10.1134/S2635167624602894

L. N. Vostretsova, V. A. Ribenek, D. I. Vostretsov

引用次数: 0

Abstract

The change in the electrical characteristics of LED structures based on InGaN/GaN caused by high current flow in the pulsed mode is investigated. Stable switching between high-conductive (resistive) and low-conductive (light-emitting) states is discovered, which is accompanied by a change in current transfer mechanisms. The main switching mechanism is considered to be the movement of mobile defects and the formation of conductive filaments (channels) in the space-charge region.

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来源期刊

Nanotechnologies in Russia NANOSCIENCE & NANOTECHNOLOGY-

CiteScore

1.20

自引率

0.00%

发文量

期刊介绍： Nanobiotechnology Reports publishes interdisciplinary research articles on fundamental aspects of the structure and properties of nanoscale objects and nanomaterials, polymeric and bioorganic molecules, and supramolecular and biohybrid complexes, as well as articles that discuss technologies for their preparation and processing, and practical implementation of products, devices, and nature-like systems based on them. The journal publishes original articles and reviews that meet the highest scientific quality standards in the following areas of science and technology studies: self-organizing structures and nanoassemblies; nanostructures, including nanotubes; functional and structural nanomaterials; polymeric, bioorganic, and hybrid nanomaterials; devices and products based on nanomaterials and nanotechnology; nanobiology and genetics, and omics technologies; nanobiomedicine and nanopharmaceutics; nanoelectronics and neuromorphic computing systems; neurocognitive systems and technologies; nanophotonics; natural science methods in a study of cultural heritage items; metrology, standardization, and monitoring in nanotechnology.