A dual-channel half-rate 32 Gb/s, 5.3 pJ/bit SerDes transceiver with 3-tap-FFE and CTLE in 28-nm CMOS for very short reach C2C and C2M interconnection

IF 1.9 3区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC
Zhaoyang Liu , Zhanhao Wen , Bao Chen , Jiang Xu , Zedong Wang , Xuqiang Zheng
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引用次数: 0

Abstract

This paper proposes a dual-channel very short reach (VSR) SerDes transceiver designed for chip-to-chip (C2C) or chip-to-module (C2M) interconnections. The transmitter utilizes a half-rate architecture and is composed of high-speed multiplexers (MUXs), a clock distribution module, and an adjustable 3-tap feed-forward equalizer (FFE). The proposed receiver employs a half-rate oversampling architecture, consisting of a continuous time linear equalizer (CTLE), a CML-based static comparator, high-speed demultiplexers (DEMUXs), a multiphase clock generation module based on an active polyphase filter (APFF), a phase interpolator (PI), and a clock and data recovery (CDR) loop. This dual-channel transceiver is designed with a 28-nm CMOS process technology and supplied with 1/1.2 V. Post-simulation results show that this transceiver can operate at a data rate of 32 Gb/s with a power efficiency of 1.81 pJ/bit for transmitter and 3.5 pJ/bit for receiver. The transceiver’s BER is less than 1E-12 and eye-wide-opening is 0.86 UI, which is under 12.4 dB channel loss at 16 GHz Nyquist frequency.
双通道半速率32gb /s, 5.3 pJ/bit SerDes收发器,具有3分接ffe和CTLE,采用28纳米CMOS,可实现极短距离C2C和C2M互连
本文提出了一种双通道极短距离(VSR) SerDes收发器,设计用于芯片到芯片(C2C)或芯片到模块(C2M)互连。发射机采用半速率架构,由高速多路复用器(mux)、时钟分配模块和可调3分接前馈均衡器(FFE)组成。该接收机采用半速率过采样架构,由连续时间线性均衡器(CTLE)、基于cml的静态比较器、高速解复用器(DEMUXs)、基于有源多相滤波器(APFF)的多相时钟生成模块、相位插值器(PI)以及时钟和数据恢复(CDR)回路组成。该双通道收发器采用28纳米CMOS工艺技术设计,并提供1/1.2 V。仿真结果表明,该收发器可在32gb /s的数据速率下工作,发送端功率效率为1.81 pJ/bit,接收端功率效率为3.5 pJ/bit。收发器的误码率小于1E-12,睁眼率为0.86 UI,在16 GHz奈奎斯特频率下,信道损耗低于12.4 dB。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
Microelectronics Journal
Microelectronics Journal 工程技术-工程:电子与电气
CiteScore
4.00
自引率
27.30%
发文量
222
审稿时长
43 days
期刊介绍: Published since 1969, the Microelectronics Journal is an international forum for the dissemination of research and applications of microelectronic systems, circuits, and emerging technologies. Papers published in the Microelectronics Journal have undergone peer review to ensure originality, relevance, and timeliness. The journal thus provides a worldwide, regular, and comprehensive update on microelectronic circuits and systems. The Microelectronics Journal invites papers describing significant research and applications in all of the areas listed below. Comprehensive review/survey papers covering recent developments will also be considered. The Microelectronics Journal covers circuits and systems. This topic includes but is not limited to: Analog, digital, mixed, and RF circuits and related design methodologies; Logic, architectural, and system level synthesis; Testing, design for testability, built-in self-test; Area, power, and thermal analysis and design; Mixed-domain simulation and design; Embedded systems; Non-von Neumann computing and related technologies and circuits; Design and test of high complexity systems integration; SoC, NoC, SIP, and NIP design and test; 3-D integration design and analysis; Emerging device technologies and circuits, such as FinFETs, SETs, spintronics, SFQ, MTJ, etc. Application aspects such as signal and image processing including circuits for cryptography, sensors, and actuators including sensor networks, reliability and quality issues, and economic models are also welcome.
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