{"title":"A two-phase oscillation scheme with direct background correction for VCO-based ADC","authors":"Tao Zhong , Yuekang Guo , Jing Jin , Jianjun Zhou","doi":"10.1016/j.mejo.2025.106644","DOIUrl":null,"url":null,"abstract":"<div><div>This paper presents a two-phase oscillation scheme for ring voltage-controlled oscillator (VCO) based ADC to directly correct the deviation of the actual V-to-F transfer characteristic, including nonlinearity and the deviation of the tuning gain and center frequency. The proposed scheme facilitates correction of these non-idealities by injecting opposing signals during two phases while preserving output phase continuity, operating in the background without the need for replicas, dithering, or stringent input restrictions. Designed and simulated in 40 nm CMOS process, the variation of the tuning gain and center frequency of the ring VCO across different process, voltage, temperature (PVT) corners are within ±17 % and ±16 %, respectively, which results in gain error and offset problems in the ADC. By applying the proposed correction techniques, both these two errors can be corrected within ±1 %. Moreover, the maximum distortion can be reduced by 35.06 dB, and the signal-to-noise-and-distortion ratio (SNDR) can be improved from 50.39 dB to 75.37 dB.</div></div>","PeriodicalId":49818,"journal":{"name":"Microelectronics Journal","volume":"159 ","pages":"Article 106644"},"PeriodicalIF":1.9000,"publicationDate":"2025-03-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Microelectronics Journal","FirstCategoryId":"5","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S1879239125000931","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
This paper presents a two-phase oscillation scheme for ring voltage-controlled oscillator (VCO) based ADC to directly correct the deviation of the actual V-to-F transfer characteristic, including nonlinearity and the deviation of the tuning gain and center frequency. The proposed scheme facilitates correction of these non-idealities by injecting opposing signals during two phases while preserving output phase continuity, operating in the background without the need for replicas, dithering, or stringent input restrictions. Designed and simulated in 40 nm CMOS process, the variation of the tuning gain and center frequency of the ring VCO across different process, voltage, temperature (PVT) corners are within ±17 % and ±16 %, respectively, which results in gain error and offset problems in the ADC. By applying the proposed correction techniques, both these two errors can be corrected within ±1 %. Moreover, the maximum distortion can be reduced by 35.06 dB, and the signal-to-noise-and-distortion ratio (SNDR) can be improved from 50.39 dB to 75.37 dB.
期刊介绍:
Published since 1969, the Microelectronics Journal is an international forum for the dissemination of research and applications of microelectronic systems, circuits, and emerging technologies. Papers published in the Microelectronics Journal have undergone peer review to ensure originality, relevance, and timeliness. The journal thus provides a worldwide, regular, and comprehensive update on microelectronic circuits and systems.
The Microelectronics Journal invites papers describing significant research and applications in all of the areas listed below. Comprehensive review/survey papers covering recent developments will also be considered. The Microelectronics Journal covers circuits and systems. This topic includes but is not limited to: Analog, digital, mixed, and RF circuits and related design methodologies; Logic, architectural, and system level synthesis; Testing, design for testability, built-in self-test; Area, power, and thermal analysis and design; Mixed-domain simulation and design; Embedded systems; Non-von Neumann computing and related technologies and circuits; Design and test of high complexity systems integration; SoC, NoC, SIP, and NIP design and test; 3-D integration design and analysis; Emerging device technologies and circuits, such as FinFETs, SETs, spintronics, SFQ, MTJ, etc.
Application aspects such as signal and image processing including circuits for cryptography, sensors, and actuators including sensor networks, reliability and quality issues, and economic models are also welcome.