3D flower-like Co3O4@ZnO nanostructures for trace-level acetone detection at low operating temperatures

IF 4.1 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Muhammad Hilal , Yasir Ali , Zhicheng Cai , Hyojung Kim , Hany S. Abdo , Ibrahim A. Alnaser , Yongha Hwang
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引用次数: 0

Abstract

Enhancing p-type metal oxide semiconductors (MOS) sensitivity at low temperatures is critical for detecting acetone, a toxic pollutant and diabetes biomarker. This study presents a 3D flower-like Co3O4@ZnO composite synthesized via additive-free hydrothermal method combined with inert gas calcination. The inert gas environment minimizes oxidation and oxygen interference, forming a robust nanoneedle-based hierarchical structure with high integrity, a large surface area (52.13 m2g−1), and uniform mesopores (∼10 nm) to facilitate efficient gas diffusion and reactions. The ZnO-Co3O4 heterojunction enhances band-bending modulation and refines carrier dynamics by synergizing ZnO’s exceptional carrier mobility with Co₃O₄’s robust redox catalytic activity, delivering markedly improved sensing performance. The optimized composite (CZ-3, Co3O4:ZnO = 0.5:0.5) demonstrated exceptional acetone sensing performance, achieving a 35.85% response to 100 ppm acetone at 150 °C, rapid response/recovery times of 40/28 s, a linear detection range of 1–150 ppm, and an ultra-low detection limit of 100 ppb. The sensor also exhibited a measurable response (0.35 %) to human exhaled breath, demonstrating its potential for non-invasive healthcare diagnostics. In contrast, the lower ZnO content in Co3O4 (CZ-1) sensor showed reduced performance, responding to 500 ppb acetone with a response of 29% to 100 ppm. These results emphasize the critical role of the heterojunction with an optimized balance of p- and n-MOS in enhancing sensing performance, highlighting a sustainable and scalable approach for advancing high-performance p-type MOS gas sensors. The proposed composite demonstrates significant potential for precise, low-temperature acetone detection in environmental monitoring and non-invasive healthcare diagnostics.
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来源期刊
Sensors and Actuators A-physical
Sensors and Actuators A-physical 工程技术-工程:电子与电气
CiteScore
8.10
自引率
6.50%
发文量
630
审稿时长
49 days
期刊介绍: Sensors and Actuators A: Physical brings together multidisciplinary interests in one journal entirely devoted to disseminating information on all aspects of research and development of solid-state devices for transducing physical signals. Sensors and Actuators A: Physical regularly publishes original papers, letters to the Editors and from time to time invited review articles within the following device areas: • Fundamentals and Physics, such as: classification of effects, physical effects, measurement theory, modelling of sensors, measurement standards, measurement errors, units and constants, time and frequency measurement. Modeling papers should bring new modeling techniques to the field and be supported by experimental results. • Materials and their Processing, such as: piezoelectric materials, polymers, metal oxides, III-V and II-VI semiconductors, thick and thin films, optical glass fibres, amorphous, polycrystalline and monocrystalline silicon. • Optoelectronic sensors, such as: photovoltaic diodes, photoconductors, photodiodes, phototransistors, positron-sensitive photodetectors, optoisolators, photodiode arrays, charge-coupled devices, light-emitting diodes, injection lasers and liquid-crystal displays. • Mechanical sensors, such as: metallic, thin-film and semiconductor strain gauges, diffused silicon pressure sensors, silicon accelerometers, solid-state displacement transducers, piezo junction devices, piezoelectric field-effect transducers (PiFETs), tunnel-diode strain sensors, surface acoustic wave devices, silicon micromechanical switches, solid-state flow meters and electronic flow controllers. Etc...
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