Modeling and analysis of phase characteristics in NMOR atomic magnetometers

IF 4.1 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Yanchao Chai , Liwei Jiang , Mengnan Tian , Xin Zhao , Jiali Liu , Junlin Chen , Zhenglong Lu , Zhuo Wang , Xusheng Lei
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引用次数: 0

Abstract

The NMOR atomic magnetometer enables measurement ranging from zero field to geophysical-scale fields, offering significant advantages in complex magnetic field environment. It achieves precise magnetic field measurement by detecting either amplitude or phase information. However, despite the fact that phase information extraction is more widely in practical applications, current research aimed at developing a comprehensive phase output model remains insufficient. In this paper, we develop a detailed phase information model for the optical modulation NMOR atomic magnetometer, deriving analytical solutions for measurement in geophysical-scale magnetic fields. Experimental results demonstrate that the phase scale factor exhibits a lower attenuation rate compared to the amplitude scale factor, resulting in more stable magnetic field measurement outcomes. Meanwhile, noise analysis identifies magnetic noise and optical power fluctuation-induced noise as the primary factors affecting the sensitivity of the NMOR atomic magnetometer. These findings demonstrate the advantages of phase detection in high-field measurement, providing valuable insights for enhancing the performance and broadening the applications of the NMOR atomic magnetometer.

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来源期刊
Sensors and Actuators A-physical
Sensors and Actuators A-physical 工程技术-工程:电子与电气
CiteScore
8.10
自引率
6.50%
发文量
630
审稿时长
49 days
期刊介绍: Sensors and Actuators A: Physical brings together multidisciplinary interests in one journal entirely devoted to disseminating information on all aspects of research and development of solid-state devices for transducing physical signals. Sensors and Actuators A: Physical regularly publishes original papers, letters to the Editors and from time to time invited review articles within the following device areas: • Fundamentals and Physics, such as: classification of effects, physical effects, measurement theory, modelling of sensors, measurement standards, measurement errors, units and constants, time and frequency measurement. Modeling papers should bring new modeling techniques to the field and be supported by experimental results. • Materials and their Processing, such as: piezoelectric materials, polymers, metal oxides, III-V and II-VI semiconductors, thick and thin films, optical glass fibres, amorphous, polycrystalline and monocrystalline silicon. • Optoelectronic sensors, such as: photovoltaic diodes, photoconductors, photodiodes, phototransistors, positron-sensitive photodetectors, optoisolators, photodiode arrays, charge-coupled devices, light-emitting diodes, injection lasers and liquid-crystal displays. • Mechanical sensors, such as: metallic, thin-film and semiconductor strain gauges, diffused silicon pressure sensors, silicon accelerometers, solid-state displacement transducers, piezo junction devices, piezoelectric field-effect transducers (PiFETs), tunnel-diode strain sensors, surface acoustic wave devices, silicon micromechanical switches, solid-state flow meters and electronic flow controllers. Etc...
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