The impact of the epoxy thin-film layer on microwave-based SnO2 gas sensor for NO2 detection

IF 4.1 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Sensors and Actuators A-physical Pub Date : 2025-03-20 DOI:10.1016/j.sna.2025.116498

D. Grochala , A. Paleczek , K. Staszek , M. Kocoń , K. Segełyn , Ł. Błajszczak , A. Rydosz

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引用次数: 0

Abstract

A microwave gas sensor with tin dioxide as a gas-sensitive layer and epoxy thin film for enhanced detection of nitrogen dioxide in a harsh environment with high relative humidity content is proposed. An optimized transmission line type of sensors operated in the 1.5 GHz – 4.5 GHz was tested under exposure to: NO₂ in the 0–100 ppm range, operating temperature in the range of 22–60 °C and relative humidity 0–85 % range. The cross-sensitivity was tested under exposure to common volatile organic compounds such as acetone, and ethanol. The sensors’ response (S) is given in phase changes based on wideband measurements. The advantage of wideband measurements compared to a single value is that they are based on multiple measurements taken at different frequencies. This greatly suppresses noise and enables measuring low target-gas concentrations within environments of high interfering compounds. The experimental results confirmed that using an additional epoxy thin film layer can reduce the impact of relative humidity on the gas-sensing properties of nitrogen dioxide in the microwave frequency range. The results should be considered a starting point for further investigation and pave the way for implementing microwave-gas sensors in harsh environments.

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来源期刊

Sensors and Actuators A-physical 工程技术-工程：电子与电气

CiteScore

8.10

自引率

6.50%

发文量

630

审稿时长

49 days

期刊介绍： Sensors and Actuators A: Physical brings together multidisciplinary interests in one journal entirely devoted to disseminating information on all aspects of research and development of solid-state devices for transducing physical signals. Sensors and Actuators A: Physical regularly publishes original papers, letters to the Editors and from time to time invited review articles within the following device areas: • Fundamentals and Physics, such as: classification of effects, physical effects, measurement theory, modelling of sensors, measurement standards, measurement errors, units and constants, time and frequency measurement. Modeling papers should bring new modeling techniques to the field and be supported by experimental results. • Materials and their Processing, such as: piezoelectric materials, polymers, metal oxides, III-V and II-VI semiconductors, thick and thin films, optical glass fibres, amorphous, polycrystalline and monocrystalline silicon. • Optoelectronic sensors, such as: photovoltaic diodes, photoconductors, photodiodes, phototransistors, positron-sensitive photodetectors, optoisolators, photodiode arrays, charge-coupled devices, light-emitting diodes, injection lasers and liquid-crystal displays. • Mechanical sensors, such as: metallic, thin-film and semiconductor strain gauges, diffused silicon pressure sensors, silicon accelerometers, solid-state displacement transducers, piezo junction devices, piezoelectric field-effect transducers (PiFETs), tunnel-diode strain sensors, surface acoustic wave devices, silicon micromechanical switches, solid-state flow meters and electronic flow controllers. Etc...