Polarization insensitive multiband terahertz absorber for sensing applications

IF 3.9 3区材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY

Materials Science and Engineering: B Pub Date : 2025-03-20 DOI:10.1016/j.mseb.2025.118215

Vikram Maurya, Sarthak Singhal

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引用次数: 0

Abstract

This paper proposes a polarization-independent multiband terahertz absorber-based sensor having an overall volume of 15.1 × 15.1 × 2.67 µm³. The absorber’s unit cell consists of six metallic rings with different shapes, a substrate, and ground. It has peak absorptivity of 99.36 %, 96.84 %, 98.78 %, 99.26 %, 99.09 %, 97.72 % & 93.14 % with Full Width Half Maxima of 0.23135, 0.38321, 0.5357, 0.9156, 1.811, 1.3179 & 1.13884 THz at 2.4084, 4.3586, 6.2491, 9.5326, 13.0748, 15.5026 & 17.4528 THz respectively. As a RI, bacteria, pesticide, chemical & haemoglobin sensor, it has S_max of 2.502 THz/RIU, 1.931 THz/RIU, 1.853 THz/RIU, 1.878 THz/RIU & 1.851 THz/RIU. The values of Q_max and FOM_max for all sensing applications are 18.362, 18.04, 17.712, 18.558 & 17.963, and 2.607 RIU⁻¹, 2.122 RIU⁻¹, 2.221 RIU⁻¹, 2.049 RIU⁻¹ & 2.022 RIU⁻¹. Compared to existing sensors, the proposed absorber-based sensor offers compact dimensions, multiband sensing, high sensitivity, Q, and FOM.

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来源期刊

Materials Science and Engineering: B 工程技术-材料科学：综合

CiteScore

5.60

自引率

2.80%

发文量

481

审稿时长

3.5 months

期刊介绍： The journal provides an international medium for the publication of theoretical and experimental studies and reviews related to the electronic, electrochemical, ionic, magnetic, optical, and biosensing properties of solid state materials in bulk, thin film and particulate forms. Papers dealing with synthesis, processing, characterization, structure, physical properties and computational aspects of nano-crystalline, crystalline, amorphous and glassy forms of ceramics, semiconductors, layered insertion compounds, low-dimensional compounds and systems, fast-ion conductors, polymers and dielectrics are viewed as suitable for publication. Articles focused on nano-structured aspects of these advanced solid-state materials will also be considered suitable.