SiO2/SiC interface of p-type 4H-SiC oxidized in mixed oxygen and nitrogen atmospheres

IF 3.9 3区材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY

Materials Science and Engineering: B Pub Date : 2025-03-19 DOI:10.1016/j.mseb.2025.118233

Siqi Zhao , Yunkai Li , Moyu Wei , Jingyi Jiao , Guoguo Yan , Zhen Fu , Quan Zhang , Chao Xiao , Qiang Yin , Xingfang Liu

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Abstract

This study investigated the interface state density of 4H-SiC p-type epitaxial layers oxidized in a mixed atmosphere of oxygen and nitrogen, across a temperature range of 1200 °C to 1400 °C. We explored the impact of nitrogen incorporation on the interface by varying the oxidation temperature and crystal plane orientation, and conducted comparative experiments in a traditional pure oxygen atmosphere to further analyze the effects of nitrogen. A competition mechanism between nitrogen and oxygen atoms during the oxidation process was proposed, suggesting that this interaction leads to the formation of oxygen vacancy defects, thereby affecting the quality of the SiO₂/SiC interface. Additionally, the quality of the oxide layer was assessed using time-zero dielectric breakdown evaluations, revealing that the oxide layer formed at 1200 °C exhibited the best breakdown resistance.

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来源期刊

Materials Science and Engineering: B 工程技术-材料科学：综合

CiteScore

5.60

自引率

2.80%

发文量

481

审稿时长

3.5 months

期刊介绍： The journal provides an international medium for the publication of theoretical and experimental studies and reviews related to the electronic, electrochemical, ionic, magnetic, optical, and biosensing properties of solid state materials in bulk, thin film and particulate forms. Papers dealing with synthesis, processing, characterization, structure, physical properties and computational aspects of nano-crystalline, crystalline, amorphous and glassy forms of ceramics, semiconductors, layered insertion compounds, low-dimensional compounds and systems, fast-ion conductors, polymers and dielectrics are viewed as suitable for publication. Articles focused on nano-structured aspects of these advanced solid-state materials will also be considered suitable.