Al/(S:DLC)/p-Si/Au (MIS) structure-based temperature sensors for moderate and high temperatures at enough high frequencies (0.1, 0.5, and 1 MHz)

Abstract

In this present study, Al/p-Si/Au (MS) structure with Sulphur-doped diamond-like carbon (S:DLC) were fabricated. In order to obtain more information on the electrical parameters and formation natural barrier height (BH) of them, the impedance-voltage-temperature (C/GVT) measurements were performed both in wide temperature range of 200–440 K and voltage range of -5 V/+8 V for three different-frequencies (0.1, 0.5, 1 MHz). The C/G-V curves show an anomalous peak especially at moderate and high temperatures. While the peak value inclines with inclining temperature, its position shift towards to negative-voltages due to the rearrangement of the interface-states (N_ss) under influence of temperature and electric-field. Some important electrical-parameters like density of N_A, Fermi-level (E_F), ΒΗ, and thickness of depletion-region (W_D) were obtained from the intercept and slope of the C⁻² vs V curve as function of temperature. The voltage dependent distribution of N_ss was extracted from the Hill-Coleman and low-high temperature models. The ln(σ) vs q/kT plot shows to two different linear regions, indicating two-different transmission mechanisms both at lower and higher temperatures. The temperature sensitivity coefficient was also extracted from V vs T plots at 0.7 nF as 29 mV/K at 0.5 MHz and this value shows us that the prepared structures can also be used as temperature sensors.