Investigation of pool boiling performance on a surface with copper nanowire arrays using molecular dynamics

IF 2.6 3区 工程技术 Q2 ENGINEERING, MECHANICAL
Xin Wang, Hongxian Du, Tiansheng Li, Jin Wang, Dan Zheng
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Abstract

The heat flux increases due to the miniaturization and integration of semiconductor components. Overheating issues necessitate reliable cooling solutions. Pool boiling effectively meets the cooling requirements of semiconductor devices due to its superior heat transfer efficiency. This study investigates the heat transfer of pool boiling on textured substrates featuring nanowire arrays of varying heights. Nanowire arrays are arranged on the bottom wall in three rows and three columns. Liquid argon serves as the working fluid. The height of nanowire arrays is 10 nm, 20 nm, and 30 nm. Nanowire arrays possess the same interval of 10 nm and a diameter of 5 nm. The dynamics behaviors are analyzed on four surfaces. The results show that nanowire arrays remarkably inhibit the transition from nucleate boiling state to film boiling state. Compared to the plain substrate, textured substrate exhibits a maximum temperature increase of 33.7 K during the boiling process. The energy obtained by argon and the number of vapor argon atoms simultaneously increases with the increase of nanowire height. The enhancement heat transfer mechanisms are elucidated through simulation results. Liquid surrounding nanowire arrays absorbs additional thermal energy from sidewalls, resulting in heat accumulation and enhancement of heat transfer. The nanowire arrays with a height of 30 nm demonstrate the highest heat transfer enhancement. Compared with the plain substrate, nanowire arrays achieve a striking heat flux increase, reaching 7168.1 MW/m2. This study investigates the nanoscale enhancement mechanism of pool boiling, offering guidance for improved cooling performance of electronic devices.
用分子动力学方法研究铜纳米线阵列表面的池沸腾性能
由于半导体元件的小型化和集成化,热通量增加。过热问题需要可靠的冷却解决方案。池沸腾以其优越的传热效率有效地满足了半导体器件的冷却要求。本文研究了不同高度纳米线阵列的纹理基板上池沸腾的传热。纳米线阵列按三行三列排列在底壁上。液态氩作为工作流体。纳米线阵列的高度分别为10nm、20nm和30nm。纳米线阵列具有相同的10 nm间隔和5 nm直径。分析了四种表面上的动力学行为。结果表明,纳米线阵列显著抑制了从核态沸腾到膜态沸腾的转变。与普通基板相比,织构基板在沸腾过程中温度最高升高33.7 K。随着纳米线高度的增加,氩气获得的能量和气态氩原子数同时增加。通过仿真结果阐明了强化传热机理。纳米线阵列周围的液体从侧壁吸收额外的热能,导致热量积累和传热增强。高度为30 nm的纳米线阵列的传热增强效果最好。与普通衬底相比,纳米线阵列的热流密度显著增加,达到7168.1 MW/m2。本研究探讨了池沸腾的纳米级强化机理,为提高电子器件的冷却性能提供指导。
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来源期刊
International Journal of Heat and Fluid Flow
International Journal of Heat and Fluid Flow 工程技术-工程:机械
CiteScore
5.00
自引率
7.70%
发文量
131
审稿时长
33 days
期刊介绍: The International Journal of Heat and Fluid Flow welcomes high-quality original contributions on experimental, computational, and physical aspects of convective heat transfer and fluid dynamics relevant to engineering or the environment, including multiphase and microscale flows. Papers reporting the application of these disciplines to design and development, with emphasis on new technological fields, are also welcomed. Some of these new fields include microscale electronic and mechanical systems; medical and biological systems; and thermal and flow control in both the internal and external environment.
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